MJ11021G

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Mfr.Part #
MJ11021G
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS PNP DARL 250V 15A TO204
Stock
7,812
In Stock :
7,812

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
Power - Max :
175W
hFE Min :
100
Transistor Element Material :
SILICON
Current Rating :
-15A
Lead Free :
Lead Free
Max Collector Current :
15A
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
Time@Peak Reflow Temperature-Max (s) :
40
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
1mA
Vce Saturation (Max) @ Ib, Ic :
3.4V @ 150mA, 15A
Operating Temperature :
-65°C~200°C TJ
Number of Terminations :
2
Pin Count :
2
Collector Emitter Breakdown Voltage :
250V
Polarity :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
175W
Transistor Application :
SWITCHING
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Terminal Form :
PIN/PEG
RoHS Status :
ROHS3 Compliant
Published :
2005
Surface Mount :
No
Voltage - Rated DC :
-250V
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
2V
Package / Case :
TO-204AA, TO-3
Packaging :
Tray
Length :
39.37mm
Weight :
6.40101g
Collector Emitter Voltage (VCEO) :
250V
Transition Frequency :
6MHz
Number of Elements :
1
Terminal Position :
BOTTOM
Power Dissipation :
150W
JESD-609 Code :
e3
Factory Lead Time :
2 Weeks
Collector Base Voltage (VCBO) :
250V
Mounting Type :
Through Hole
Width :
26.67mm
Number of Pins :
2
Case Connection :
COLLECTOR
Height :
8.51mm
Emitter Base Voltage (VEBO) :
50V
Transistor Type :
PNP - Darlington
Peak Reflow Temperature (Cel) :
260
Datasheets
MJ11021G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11021G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Number of Terminations:2, Package / Case:TO-204AA, TO-3, Mounting Type:Through Hole, Number of Pins:2, MJ11021G pinout, MJ11021G datasheet PDF, MJ11021G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11021G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11021G


PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole

MJ11021G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.A transition frequency of 6MHz is present in the part.Collector current can be as low as 15A volts at its maximum.

MJ11021G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz


MJ11021G Applications


There are a lot of ON Semiconductor
MJ11021G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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