MJ11021G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Pbfree Code :

yes

Height :

8.51mm

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

250V

Packaging :

Tray

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vce Saturation (Max) @ Ib, Ic :

3.4V @ 150mA, 15A

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

hFE Min :

100

JESD-609 Code :

e3

Power Dissipation :

150W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

250V

Package / Case :

TO-204AA, TO-3

Transistor Type :

PNP - Darlington

Radiation Hardening :

No

Power - Max :

175W

Transistor Application :

SWITCHING

Surface Mount :

No

Number of Pins :

2

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

400 @ 10A 5V

Weight :

6.40101g

Current Rating :

-15A

Peak Reflow Temperature (Cel) :

260

Pin Count :

2

Published :

2005

Transition Frequency :

6MHz

Polarity :

PNP

Max Collector Current :

15A

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

1mA

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Element Configuration :

Single

Width :

26.67mm

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

50V

Collector Emitter Saturation Voltage :

2V

Collector Emitter Breakdown Voltage :

250V

Voltage - Rated DC :

-250V

Operating Temperature :

-65°C~200°C TJ

REACH SVHC :

No SVHC

Max Power Dissipation :

175W

Terminal Form :

PIN/PEG

Length :

39.37mm

Case Connection :

COLLECTOR

Terminal Position :

BOTTOM