MJ11021G

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Mfr.Part #
MJ11021G
Manufacturer
onsemi
Package / Case
TO-204AA, TO-3
Datasheet
Download
Description
TRANS PNP DARL 250V 15A TO204
Stock
7,812
In Stock :
7,812

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
PIN/PEG
Transistor Type :
PNP - Darlington
Collector Emitter Saturation Voltage :
2V
Number of Terminations :
2
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
250V
Max Collector Current :
15A
Transistor Application :
SWITCHING
Pin Count :
2
Published :
2005
Number of Elements :
1
Length :
39.37mm
Operating Temperature :
-65°C~200°C TJ
Width :
26.67mm
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
1mA
Pbfree Code :
yes
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
50V
Power - Max :
175W
Collector Base Voltage (VCBO) :
250V
Surface Mount :
No
Polarity :
PNP
Packaging :
Tray
Factory Lead Time :
2 Weeks
Transition Frequency :
6MHz
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Element Configuration :
Single
REACH SVHC :
No SVHC
Height :
8.51mm
Power Dissipation :
150W
Voltage - Rated DC :
-250V
Collector Emitter Voltage (VCEO) :
250V
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 10A 5V
Radiation Hardening :
No
Max Power Dissipation :
175W
Number of Pins :
2
Terminal Position :
BOTTOM
hFE Min :
100
Package / Case :
TO-204AA, TO-3
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Current Rating :
-15A
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
3.4V @ 150mA, 15A
Weight :
6.40101g
Datasheets
MJ11021G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJ11021G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-65°C~200°C TJ, Number of Pins:2, Package / Case:TO-204AA, TO-3, Mounting Type:Through Hole, MJ11021G pinout, MJ11021G datasheet PDF, MJ11021G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJ11021G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJ11021G


PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole

MJ11021G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 400 @ 10A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3.4V @ 150mA, 15A.If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -15A.A transition frequency of 6MHz is present in the part.Collector current can be as low as 15A volts at its maximum.

MJ11021G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is -15A
a transition frequency of 6MHz


MJ11021G Applications


There are a lot of ON Semiconductor
MJ11021G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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