MJ11016G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

BOTTOM

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Element Configuration :

Single

Weight :

4.535924g

Collector Emitter Voltage (VCEO) :

120V

Length :

39.37mm

Current - Collector Cutoff (Max) :

1mA

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Terminal Form :

PIN/PEG

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

3V

Packaging :

Tray

Current Rating :

30A

Operating Temperature :

-55°C~200°C TJ

Case Connection :

COLLECTOR

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

200W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Voltage - Rated DC :

120V

Number of Elements :

1

Number of Pins :

2

JESD-609 Code :

e3

Transition Frequency :

4MHz

Width :

26.67mm

Factory Lead Time :

2 Weeks

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

4MHz

Number of Terminations :

2

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

120V

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

30A

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

120V

Height :

8.51mm

Radiation Hardening :

No

Transistor Type :

NPN - Darlington

Package / Case :

TO-204AA, TO-3

Max Power Dissipation :

200W

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Pbfree Code :

yes

Surface Mount :

No

Max Collector Current :

30A

Transistor Application :

AMPLIFIER