MJ11016G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

200W

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

120V

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

5V

Voltage - Rated DC :

120V

Weight :

4.535924g

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

1mA

ECCN Code :

EAR99

Contact Plating :

Tin

Transition Frequency :

4MHz

Collector Emitter Breakdown Voltage :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

4V @ 300mA, 30A

Packaging :

Tray

Package / Case :

TO-204AA, TO-3

Transistor Element Material :

SILICON

Width :

26.67mm

Collector Emitter Voltage (VCEO) :

120V

Pbfree Code :

yes

Frequency - Transition :

4MHz

Surface Mount :

No

Number of Pins :

2

Terminal Form :

PIN/PEG

Power Dissipation :

200W

Element Configuration :

Single

Radiation Hardening :

No

Pin Count :

2

Continuous Collector Current :

30A

Published :

2006

Collector Emitter Saturation Voltage :

3V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~200°C TJ

Number of Elements :

1

Polarity :

NPN

Factory Lead Time :

2 Weeks

Mounting Type :

Through Hole

Height :

8.51mm

Transistor Type :

NPN - Darlington

Case Connection :

COLLECTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 20A 5V

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

30A

Length :

39.37mm

Current Rating :

30A