KST10MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Power Dissipation :

350mW

Transition Frequency :

650MHz

Max Power Dissipation :

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Factory Lead Time :

13 Weeks

Collector-Base Capacitance-Max :

0.7pF

Polarity/Channel Type :

NPN

Current Rating :

4mA

Base Part Number :

KST10

Pbfree Code :

yes

Number of Elements :

1

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

500mV

Published :

2002

hFE Min :

60

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Output Power :

350mW

Packaging :

Tape and Reel (TR)

Length :

2.9mm

Width :

1.3mm

Gain Bandwidth Product :

650MHz

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

25V

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Voltage - Rated DC :

25V

Collector Emitter Voltage (VCEO) :

25V

Element Configuration :

Single

JESD-609 Code :

e3

Max Breakdown Voltage :

25V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Height :

960μm

Weight :

30mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Max Collector Current :

50mA

Mounting Type :

Surface Mount

Frequency :

650MHz

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

3V