KST10MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Published :

2002

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

25V

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

50mA

Power Dissipation :

350mW

Polarity/Channel Type :

NPN

Weight :

30mg

Transition Frequency :

650MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Output Power :

350mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

25V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Gain Bandwidth Product :

650MHz

Max Power Dissipation :

350mW

Collector-Base Capacitance-Max :

0.7pF

Collector Base Voltage (VCBO) :

30V

JESD-609 Code :

e3

Width :

1.3mm

Transistor Type :

NPN

Height :

960μm

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Current Rating :

4mA

Emitter Base Voltage (VEBO) :

3V

Mount :

Surface Mount

Max Breakdown Voltage :

25V

Collector Emitter Voltage (VCEO) :

25V

ECCN Code :

EAR99

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No

Base Part Number :

KST10

Frequency :

650MHz

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Terminal Position :

Dual

hFE Min :

60

Length :

2.9mm

Factory Lead Time :

13 Weeks