KST10MTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Gain Bandwidth Product :

650MHz

Collector Emitter Voltage (VCEO) :

25V

Current Rating :

4mA

Emitter Base Voltage (VEBO) :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

350mW

hFE Min :

60

Collector-Base Capacitance-Max :

0.7pF

Voltage - Rated DC :

25V

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Number of Pins :

3

Transistor Type :

NPN

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Max Collector Current :

50mA

Lead Free :

Lead Free

JESD-609 Code :

e3

Width :

1.3mm

Number of Elements :

1

Pbfree Code :

yes

Output Power :

350mW

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

30V

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

Dual

Terminal Form :

Gull wing

Max Operating Temperature :

150°C

Max Breakdown Voltage :

25V

Transition Frequency :

650MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

350mW

Frequency :

650MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

25V

Base Part Number :

KST10

Radiation Hardening :

No

Published :

2002

Mounting Type :

Surface Mount

Length :

2.9mm

Height :

960μm

Weight :

30mg