KST10MTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - RF

Weight :

30mg

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector Emitter Voltage (VCEO) :

25V

Height :

960μm

Element Configuration :

Single

Pbfree Code :

yes

Max Breakdown Voltage :

25V

Current Rating :

4mA

Terminal Finish :

Tin (Sn)

Transition Frequency :

650MHz

Factory Lead Time :

13 Weeks

Collector Base Voltage (VCBO) :

30V

Polarity/Channel Type :

NPN

Number of Terminations :

3

Power Dissipation :

350mW

Voltage - Rated DC :

25V

Packaging :

Tape and Reel (TR)

Length :

2.9mm

Collector Emitter Breakdown Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-609 Code :

e3

Max Operating Temperature :

150°C

Collector-Base Capacitance-Max :

0.7pF

Lead Free :

Lead Free

Number of Elements :

1

Max Power Dissipation :

350mW

hFE Min :

60

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

500mV

Max Collector Current :

50mA

ECCN Code :

EAR99

Frequency :

650MHz

Mount :

Surface Mount

Width :

1.3mm

Published :

2002

Gain Bandwidth Product :

650MHz

Transistor Type :

NPN

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

KST10

REACH SVHC :

No SVHC

Number of Pins :

3

Emitter Base Voltage (VEBO) :

3V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Output Power :

350mW

Radiation Hardening :

No