KST13MTF

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Mfr.Part #
KST13MTF
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN DARL 30V 0.3A SOT23-3
Stock
7,828
In Stock :
7,828

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Factory Lead Time :
6 Weeks
Max Breakdown Voltage :
30V
Current - Collector Cutoff (Max) :
100nA ICBO
Base Part Number :
KST13
Lead Free :
Lead Free
Mount :
Surface Mount
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
30V
hFE Min :
10000
Voltage - Rated DC :
30V
Polarity :
NPN
Transistor Application :
AMPLIFIER
Collector Emitter Saturation Voltage :
1.5V
Frequency - Transition :
125MHz
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
RoHS Status :
RoHS Compliant
Published :
2008
Terminal Finish :
Tin (Sn)
Max Collector Current :
300mA
Current Rating :
300mA
Emitter Base Voltage (VEBO) :
10V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage (VCEO) :
30V
Transition Frequency :
125MHz
Element Configuration :
Single
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
30V
Transistor Type :
NPN - Darlington
Max Operating Temperature :
150°C
Weight :
30mg
Radiation Hardening :
No
Number of Terminations :
3
Terminal Position :
Dual
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Max Power Dissipation :
350mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Datasheets
KST13MTF
Introducing Transistors - Bipolar (BJT) - Single onsemi KST13MTF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:KST13, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Mounting Type:Surface Mount, KST13MTF pinout, KST13MTF datasheet PDF, KST13MTF amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KST13MTF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KST13MTF


NPN - Darlington 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

KST13MTF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 300mA volts.

KST13MTF Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz


KST13MTF Applications


There are a lot of ON Semiconductor
KST13MTF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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