KST13MTF
- Mfr.Part #
- KST13MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 7,828
- In Stock :
- 7,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Factory Lead Time :
- 6 Weeks
- Max Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- KST13
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 10000
- Voltage - Rated DC :
- 30V
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 1.5V
- Frequency - Transition :
- 125MHz
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 300mA
- Current Rating :
- 300mA
- Emitter Base Voltage (VEBO) :
- 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 30V
- Transition Frequency :
- 125MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- NPN - Darlington
- Max Operating Temperature :
- 150°C
- Weight :
- 30mg
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 350mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Datasheets
- KST13MTF

NPN - Darlington 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST13MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 300mA volts.
KST13MTF Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
KST13MTF Applications
There are a lot of ON Semiconductor
KST13MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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