IXFX32N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS Corporation

JESD-609 Code :

e1

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 4mA

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

32A Tc

Base Product Number :

IXFX32

Input Capacitance (Ciss) (Max) @ Vds :

5450pF @ 25V

Pbfree Code :

yes

Number of Terminals :

3

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

120A

Package :

Tube

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Product Status :

Obsolete

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.15Ohm

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mount :

Through Hole

DS Breakdown Voltage-Min :

500V

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Terminal Position :

Single

Number of Terminations :

3

Surface Mount :

No

Qualification Status :

Not Qualified

Published :

2000

Supplier Device Package :

PLUS247™-3

Number of Pins :

3

Number of Elements :

1

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Series :

HiPerFET™

Vgs (Max) :

±20V

Power Dissipation (Max) :

360W (Tc)

Avalanche Energy Rating (Eas) :

1500 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

360W Tc

Continuous Drain Current (ID) :

32A

Packaging :

Tube

FET Feature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 15A, 10V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING