IXFX120N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

3000 mJ

Drain to Source Breakdown Voltage :

250V

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

21.34 mm

Power Dissipation (Max) :

560W (Tc)

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Power Dissipation-Max :

560W Tc

Drain Current-Max (Abs) (ID) :

120 A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Channels :

1 Channel

Brand :

IXYS

Fall Time (Typ) :

35 ns

Vgs (Max) :

±20V

Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e1

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.022Ohm

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFX120

Number of Terminations :

3

Number of Terminals :

3

Terminal Position :

Single

Supplier Device Package :

PLUS247™-3

Pulsed Drain Current-Max (IDM) :

480A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Published :

2002

FET Feature :

--

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

250V

ECCN Code :

EAR99

Width :

5.21 mm

Number of Elements :

1

Surface Mount :

No

Length :

16.13 mm

Gate Charge (Qg) (Max) @ Vgs :

400nC @ 10V

DS Breakdown Voltage-Min :

250 V

Number of Pins :

3

Package :

Tube

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

RoHS :

Details

JESD-30 Code :

R-PSIP-T3

Product Category :

MOSFET

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

175 ns

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Power Dissipation :

560W

Power Dissipation-Max (Abs) :

560 W

Mount :

Through Hole

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

120A

Case Connection :

DRAIN

Tradename :

HyperFET

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Rise Time :

38ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 8mA

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™

Product Type :

MOSFET