IXFX120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Tradename :

HyperFET

RoHS Status :

RoHS Compliant

Power Dissipation :

560W

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

Not Applicable

Resistance :

17mOhm

Element Configuration :

Single

Turn-Off Delay Time :

110 ns

Mount :

Through Hole

Power Dissipation-Max (Abs) :

560 W

Pin Count :

3

Vgs (Max) :

±20V

Supplier Device Package :

PLUS247™-3

Fall Time (Typ) :

35 ns

Drain to Source Voltage (Vdss) :

200V

JESD-609 Code :

e1

Length :

16.13 mm

Power Dissipation-Max :

560W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Channel Mode :

Enhancement

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Base Product Number :

IXFX120

Package Shape :

RECTANGULAR

Number of Elements :

1

Brand :

IXYS

ECCN Code :

EAR99

Surface Mount :

No

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

120A

Packaging :

Tube

Factory Lead Time :

8 Weeks

Published :

2003

Package :

Tube

Pulsed Drain Current-Max (IDM) :

480A

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel

Case Connection :

DRAIN

Height :

21.34 mm

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Lead Free :

Lead Free

Series :

HiPerFET™

Drain Current-Max (Abs) (ID) :

120 A

Current Rating :

120A

Drain-source On Resistance-Max :

0.017 Ω

Voltage - Rated DC :

200V

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

RoHS :

Details

FET Feature :

--

Number of Terminations :

3

DS Breakdown Voltage-Min :

200 V

Drain to Source Breakdown Voltage :

200V

Package / Case :

TO-247-3

JESD-30 Code :

R-PSIP-T3

Product Type :

MOSFET

Product Category :

MOSFET

Width :

5.21 mm

Pbfree Code :

yes

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

Radiation Hardening :

No

Power Dissipation (Max) :

560W (Tc)

Polarity/Channel Type :

N-Channel

Product Status :

Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Rise Time :

65ns