IXFX120N20
- Mfr.Part #
- IXFX120N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A PLUS247
- Stock
- 2,012
- In Stock :
- 2,012
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Mounting Type :
- Through Hole
- Tradename :
- HyperFET
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 560W
- Additional Feature :
- AVALANCHE RATED
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Resistance :
- 17mOhm
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 110 ns
- Mount :
- Through Hole
- Power Dissipation-Max (Abs) :
- 560 W
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- PLUS247™-3
- Fall Time (Typ) :
- 35 ns
- Drain to Source Voltage (Vdss) :
- 200V
- JESD-609 Code :
- e1
- Length :
- 16.13 mm
- Power Dissipation-Max :
- 560W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Base Product Number :
- IXFX120
- Package Shape :
- RECTANGULAR
- Number of Elements :
- 1
- Brand :
- IXYS
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Maximum Operating Temperature :
- + 150 C
- Reach Compliance Code :
- Compliant
- Continuous Drain Current (ID) :
- 120A
- Packaging :
- Tube
- Factory Lead Time :
- 8 Weeks
- Published :
- 2003
- Package :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 480A
- Terminal Form :
- THROUGH-HOLE
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Height :
- 21.34 mm
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Lead Free :
- Lead Free
- Series :
- HiPerFET™
- Drain Current-Max (Abs) (ID) :
- 120 A
- Current Rating :
- 120A
- Drain-source On Resistance-Max :
- 0.017 Ω
- Voltage - Rated DC :
- 200V
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 60A, 10V
- RoHS :
- Details
- FET Feature :
- --
- Number of Terminations :
- 3
- DS Breakdown Voltage-Min :
- 200 V
- Drain to Source Breakdown Voltage :
- 200V
- Package / Case :
- TO-247-3
- JESD-30 Code :
- R-PSIP-T3
- Product Type :
- MOSFET
- Product Category :
- MOSFET
- Width :
- 5.21 mm
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Radiation Hardening :
- No
- Power Dissipation (Max) :
- 560W (Tc)
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Not For New Designs
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Transistor Type :
- 1 N-Channel
- Minimum Operating Temperature :
- - 55 C
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Rise Time :
- 65ns
- Datasheets
- IXFX120N20
IXFX120N20 Documents
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N-Channel Tube 17m Ω @ 60A, 10V ±20V 9100pF @ 25V 300nC @ 10V 200V TO-247-3
IXFX120N20 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 9100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 120 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX120N20 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a 200V drain to source voltage (Vdss)
IXFX120N20 Applications
There are a lot of IXYS
IXFX120N20 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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