IXFX120N20
- Mfr.Part #
- IXFX120N20
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 120A PLUS247
- Stock
- 2,012
- In Stock :
- 2,012
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 110 ns
- Fall Time (Typ) :
- 35 ns
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 200 V
- Voltage - Rated DC :
- 200V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Package / Case :
- TO-247-3
- Surface Mount :
- No
- Height :
- 21.34 mm
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 120 A
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Length :
- 16.13 mm
- Continuous Drain Current (ID) :
- 120A
- Rds On (Max) @ Id, Vgs :
- 17m Ω @ 60A, 10V
- Pbfree Code :
- yes
- Base Product Number :
- IXFX120
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Reach Compliance Code :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 480A
- Channel Mode :
- Enhancement
- Resistance :
- 17mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- PLUS247™-3
- Series :
- HiPerFET™
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 200V
- Manufacturer :
- IXYS
- Current Rating :
- 120A
- Power Dissipation (Max) :
- 560W (Tc)
- Vgs (Max) :
- ±20V
- Product Status :
- Not For New Designs
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 560 W
- RoHS :
- Details
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.017 Ω
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Rise Time :
- 65ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 560W Tc
- Power Dissipation :
- 560W
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Single
- Terminal Form :
- THROUGH-HOLE
- Lead Free :
- Lead Free
- Width :
- 5.21 mm
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Package :
- Tube
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 200V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2003
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Number of Elements :
- 1
- FET Feature :
- --
- Datasheets
- IXFX120N20
IXFX120N20 Documents
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N-Channel Tube 17m Ω @ 60A, 10V ±20V 9100pF @ 25V 300nC @ 10V 200V TO-247-3
IXFX120N20 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 9100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 120A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.As shown in the table below, the drain current of this device is 120 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 480A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX120N20 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 480A.
a 200V drain to source voltage (Vdss)
IXFX120N20 Applications
There are a lot of IXYS
IXFX120N20 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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