IXFX120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Not For New Designs

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

200V

Current Rating :

120A

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Product Type :

MOSFET

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Case Connection :

DRAIN

Fall Time (Typ) :

35 ns

Drain to Source Voltage (Vdss) :

200V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200 V

Moisture Sensitivity Level (MSL) :

Not Applicable

Transistor Application :

SWITCHING

Number of Terminals :

3

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Length :

16.13 mm

Lead Free :

Lead Free

Turn-Off Delay Time :

110 ns

Pulsed Drain Current-Max (IDM) :

480A

Number of Pins :

3

Height :

21.34 mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

JESD-609 Code :

e1

Element Configuration :

Single

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Radiation Hardening :

No

Channel Mode :

Enhancement

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Power Dissipation :

560W

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Brand :

IXYS

Transistor Polarity :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Resistance :

17mOhm

FET Feature :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

3

Published :

2003

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Package / Case :

TO-247-3

Manufacturer :

IXYS

Continuous Drain Current (ID) :

120A

Qualification Status :

Not Qualified

Terminal Position :

Single

Product Category :

MOSFET

Factory Lead Time :

8 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Voltage - Rated DC :

200V

Configuration :

Single

Drain Current-Max (Abs) (ID) :

120 A

FET Type :

N-Channel

Surface Mount :

No

Power Dissipation (Max) :

560W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

3000 mJ

Power Dissipation-Max (Abs) :

560 W

Width :

5.21 mm

Rise Time :

65ns

Reach Compliance Code :

Compliant

Tradename :

HyperFET

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Power Dissipation-Max :

560W Tc

Transistor Type :

1 N-Channel

Supplier Device Package :

PLUS247™-3

Vgs(th) (Max) @ Id :

4V @ 8mA

RoHS :

Details

Series :

HiPerFET™

Base Product Number :

IXFX120

Drain-source On Resistance-Max :

0.017 Ω