IXFX100N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

ECCN Code :

EAR99

Mount :

Through Hole

Reach Compliance Code :

Compliant

Number of Elements :

1

RoHS :

Details

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

Package / Case :

TO-247-3

Product Category :

MOSFET

Avalanche Energy Rating (Eas) :

3000 mJ

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

400A

Manufacturer :

IXYS

Brand :

IXYS

Rise Time :

55ns

Number of Channels :

1 Channel

JESD-609 Code :

e1

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™

Packaging :

Tube

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Package :

Tube

Power Dissipation :

560W

DS Breakdown Voltage-Min :

250 V

Drain Current-Max (Abs) (ID) :

100 A

Surface Mount :

No

Configuration :

Single

Drain-source On Resistance-Max :

0.027Ohm

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Height :

21.34 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Base Product Number :

IXFX100

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

560W (Tc)

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

250V

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Voltage (Vdss) :

250V

Power Dissipation-Max (Abs) :

560 W

Transistor Type :

1 N-Channel

Turn-Off Delay Time :

110 ns

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Product Type :

MOSFET

Product Status :

Obsolete

Width :

5.21 mm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

40 ns

Rds On (Max) @ Id, Vgs :

27m Ω @ 50A, 10V

Pin Count :

3

Published :

2001

Supplier Device Package :

PLUS247™-3

Vgs(th) (Max) @ Id :

4V @ 8mA

Tradename :

HyperFET

Vgs (Max) :

±20V

Number of Pins :

3

Transistor Element Material :

SILICON

Terminal Position :

Single

Number of Terminals :

3

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Length :

16.13 mm

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Power Dissipation-Max :

560W Tc

Transistor Polarity :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

100A