IXFX100N25

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Mfr.Part #
IXFX100N25
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 250V 100A PLUS247-3
Stock
13,075
In Stock :
13,075

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Drain to Source Voltage (Vdss) :
250V
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Series :
HiPerFET™
Vgs(th) (Max) @ Id :
4V @ 8mA
Mount :
Through Hole
Number of Pins :
3
Tradename :
HyperFET
Transistor Type :
1 N-Channel
FET Feature :
--
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation (Max) :
560W (Tc)
DS Breakdown Voltage-Min :
250 V
Reach Compliance Code :
Compliant
Number of Terminations :
3
Product Status :
Obsolete
Rise Time :
55ns
Surface Mount :
No
Avalanche Energy Rating (Eas) :
3000 mJ
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
40 ns
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Turn-Off Delay Time :
110 ns
Continuous Drain Current (ID) :
100A
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
560 W
Power Dissipation-Max :
560W Tc
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
JESD-30 Code :
R-PSIP-T3
Additional Feature :
AVALANCHE RATED
Terminal Form :
THROUGH-HOLE
Published :
2001
Mounting Style :
Through Hole
Terminal Position :
Single
Product Category :
MOSFET
Supplier Device Package :
PLUS247™-3
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Pin Count :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
5.21 mm
Pulsed Drain Current-Max (IDM) :
400A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
250V
RoHS :
Details
Base Product Number :
IXFX100
FET Type :
N-Channel
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.027Ohm
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Number of Terminals :
3
Product Type :
MOSFET
Brand :
IXYS
Channel Mode :
Enhancement
JESD-609 Code :
e1
Drain Current-Max (Abs) (ID) :
100 A
Height :
21.34 mm
Package / Case :
TO-247-3
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 10V
Power Dissipation :
560W
Number of Elements :
1
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
ECCN Code :
EAR99
Case Connection :
DRAIN
Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Length :
16.13 mm
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX100N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, IXFX100N25 pinout, IXFX100N25 datasheet PDF, IXFX100N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX100N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX100N25


N-Channel Tube 27m Ω @ 50A, 10V ±20V 9100pF @ 25V 300nC @ 10V 250V TO-247-3

IXFX100N25 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 100 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 400A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFX100N25 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)


IXFX100N25 Applications


There are a lot of IXYS
IXFX100N25 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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