IXFX100N25
- Mfr.Part #
- IXFX100N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A PLUS247-3
- Stock
- 13,075
- In Stock :
- 13,075
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Height :
- 21.34 mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Fall Time (Typ) :
- 40 ns
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 250 V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 400A
- FET Feature :
- --
- Manufacturer :
- IXYS
- Series :
- HiPerFET™
- Package / Case :
- TO-247-3
- Tradename :
- HyperFET
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Terminal Form :
- THROUGH-HOLE
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 250V
- Power Dissipation :
- 560W
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Drain-source On Resistance-Max :
- 0.027Ohm
- Rise Time :
- 55ns
- Continuous Drain Current (ID) :
- 100A
- Product Status :
- Obsolete
- Transistor Type :
- 1 N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Packaging :
- Tube
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 100 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max (Abs) :
- 560 W
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- Power Dissipation-Max :
- 560W Tc
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Supplier Device Package :
- PLUS247™-3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Terminals :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 250V
- Mount :
- Through Hole
- Published :
- 2001
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXFX100
- Mounting Style :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Channel Mode :
- Enhancement
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Length :
- 16.13 mm
- Package :
- Tube
- JESD-30 Code :
- R-PSIP-T3
- Width :
- 5.21 mm
- Number of Terminations :
- 3
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 110 ns
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Compliant
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Power Dissipation (Max) :
- 560W (Tc)
- Datasheets
- IXFX100N25
IXFX100N25 Documents
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N-Channel Tube 27m Ω @ 50A, 10V ±20V 9100pF @ 25V 300nC @ 10V 250V TO-247-3
IXFX100N25 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 100 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 400A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFX100N25 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)
IXFX100N25 Applications
There are a lot of IXYS
IXFX100N25 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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