IXFX140N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

24m Ω @ 70A, 10V

Published :

2008

Terminal Form :

THROUGH-HOLE

Max Power Dissipation :

1.04 kW

Max Operating Temperature :

150 °C

Transistor Element Material :

SILICON

Power Dissipation-Max :

1040W Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Configuration :

Single

Number of Channels :

1 Channel

FET Type :

N-Channel

Drain to Source Resistance :

24 mΩ

Series :

HiPerFET™, PolarP2™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Style :

Through Hole

Additional Feature :

AVALANCHE RATED

Number of Terminals :

3

Brand :

IXYS

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFX140

Power Dissipation-Max (Abs) :

1040 W

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

300 V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

300V

Pin Count :

3

Input Capacitance :

14.8 nF

Product Status :

Active

Gate to Source Voltage (Vgs) :

20V

Height :

21.34 mm

Supplier Device Package :

PLUS247™-3

Power Dissipation :

1.04kW

Drain to Source Breakdown Voltage :

300V

Case Connection :

DRAIN

Number of Terminations :

3

Fall Time (Typ) :

20 ns

Tradename :

HiPerFET

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

140A

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

140 A

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

RoHS :

Details

JESD-30 Code :

R-PSIP-T3

Rise Time :

30ns

Transistor Type :

1 N-Channel

Vgs (Max) :

±20V

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 8mA

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

5000 mJ

Pulsed Drain Current-Max (IDM) :

300 A

Product Category :

MOSFET

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Length :

16.13 mm

Product Type :

MOSFET

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Power Dissipation (Max) :

1040W (Tc)

Drain-source On Resistance-Max :

0.024Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mounting Type :

Through Hole

Packaging :

Tube

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Package Shape :

RECTANGULAR

Width :

5.21 mm

Rds On Max :

24 mΩ

Turn-Off Delay Time :

100 ns

Package / Case :

TO-247-3

Min Operating Temperature :

-55 °C

Type :

Polar Power MOSFET HiPerFET

Manufacturer :

IXYS

FET Feature :

--

Transistor Application :

SWITCHING

Factory Lead Time :

30 Weeks

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Terminal Position :

Single