IXFX140N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Power Dissipation-Max :

1040W Tc

Element Configuration :

Single

Number of Elements :

1

Supplier Device Package :

PLUS247™-3

Operating Mode :

ENHANCEMENT MODE

Product Category :

MOSFET

Number of Terminations :

3

Power Dissipation :

1.04kW

Package :

Tube

JESD-609 Code :

e1

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

140A

Mount :

Through Hole

Transistor Type :

1 N-Channel

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Input Capacitance :

14.8 nF

Drain Current-Max (Abs) (ID) :

140 A

Rds On (Max) @ Id, Vgs :

24m Ω @ 70A, 10V

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Published :

2008

Length :

16.13 mm

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Width :

5.21 mm

Series :

HiPerFET™, PolarP2™

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Number of Channels :

1 Channel

RoHS :

Details

Pbfree Code :

yes

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.024Ohm

Turn-Off Delay Time :

100 ns

Height :

21.34 mm

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

300V

Min Operating Temperature :

-55 °C

Configuration :

Single

Factory Lead Time :

30 Weeks

Radiation Hardening :

No

Package / Case :

TO-247-3

ECCN Code :

EAR99

Max Power Dissipation :

1.04 kW

Power Dissipation-Max (Abs) :

1040 W

Max Operating Temperature :

150 °C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

FET Feature :

--

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

Base Product Number :

IXFX140

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

300 A

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

300V

Channel Mode :

Enhancement

Type :

Polar Power MOSFET HiPerFET

Number of Pins :

3

Rise Time :

30ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Fall Time (Typ) :

20 ns

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Rds On Max :

24 mΩ

Packaging :

Tube

Drain to Source Resistance :

24 mΩ

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation (Max) :

1040W (Tc)

Pin Count :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

5000 mJ

Vgs(th) (Max) @ Id :

5V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

DS Breakdown Voltage-Min :

300 V