IXFX140N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Type :

1 N-Channel

Pbfree Code :

yes

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Rise Time :

30ns

Min Operating Temperature :

-55 °C

Package :

Tube

Drain to Source Breakdown Voltage :

300V

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

5000 mJ

Mounting Type :

Through Hole

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 8mA

Rds On (Max) @ Id, Vgs :

24m Ω @ 70A, 10V

Maximum Operating Temperature :

+ 150 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Base Product Number :

IXFX140

Power Dissipation-Max (Abs) :

1040 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Drain-source On Resistance-Max :

0.024Ohm

Pin Count :

3

Qualification Status :

Not Qualified

FET Type :

N-Channel

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Drain to Source Resistance :

24 mΩ

Radiation Hardening :

No

Continuous Drain Current (ID) :

140A

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

1040W (Tc)

Product Category :

MOSFET

Height :

21.34 mm

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Power Dissipation :

1.04kW

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Supplier Device Package :

PLUS247™-3

Number of Elements :

1

Factory Lead Time :

30 Weeks

Mount :

Through Hole

Power Dissipation-Max :

1040W Tc

Configuration :

Single

Number of Terminations :

3

DS Breakdown Voltage-Min :

300 V

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

RoHS :

Details

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

300V

Pulsed Drain Current-Max (IDM) :

300 A

Channel Mode :

Enhancement

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Surface Mount :

No

Brand :

IXYS

JESD-609 Code :

e1

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

100 ns

Published :

2008

Product Type :

MOSFET

Drain Current-Max (Abs) (ID) :

140 A

Max Power Dissipation :

1.04 kW

Width :

5.21 mm

Manufacturer :

IXYS

Packaging :

Tube

FET Feature :

--

Series :

HiPerFET™, PolarP2™

Terminal Position :

Single

Rds On Max :

24 mΩ

Input Capacitance :

14.8 nF

Tradename :

HiPerFET

Type :

Polar Power MOSFET HiPerFET

Length :

16.13 mm

Package / Case :

TO-247-3

Fall Time (Typ) :

20 ns