IXFX140N25T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Power Dissipation-Max (Abs) :

960 W

Base Product Number :

IXFX140

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

30 Weeks

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

960W Tc

Vgs (Max) :

±20V

Number of Elements :

1

Published :

2009

Package :

Tube

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

380A

Case Connection :

DRAIN

Rds On Max :

17 mΩ

Max Power Dissipation :

960 W

Tradename :

HiPerFET

Width :

5.21 mm

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

Height :

21.34 mm

Mounting Style :

Through Hole

FET Type :

N-Channel

Product Category :

MOSFET

Number of Terminations :

3

Channel Mode :

Enhancement

Supplier Device Package :

PLUS247™-3

Pin Count :

3

ECCN Code :

EAR99

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Active

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Avalanche Energy Rating (Eas) :

3000 mJ

Additional Feature :

AVALANCHE RATED

Rise Time :

29 ns

Continuous Drain Current (ID) :

140A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

IXYS

Mounting Type :

Through Hole

Length :

16.13 mm

Drain Current-Max (Abs) (ID) :

140 A

Type :

GigaMOS Power MOSFET

Terminal Position :

Single

Reach Compliance Code :

Compliant

Package / Case :

TO-247-3

Pbfree Code :

yes

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.017Ohm

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5V @ 4mA

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

Number of Terminals :

3

RoHS Status :

ROHS3 Compliant

Series :

GigaMOS™

Input Capacitance :

19 nF

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

960W (Tc)

Current - Continuous Drain (Id) @ 25°C :

140A Tc

Brand :

IXYS

Terminal Form :

THROUGH-HOLE

DS Breakdown Voltage-Min :

250V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

250V