IXFX150N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 75A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Pulsed Drain Current-Max (IDM) :

600A

Maximum Operating Temperature :

+ 150 C

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Product Category :

MOSFET

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Base Product Number :

IXFX150

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Package :

Tube

Supplier Device Package :

PLUS247™-3

DS Breakdown Voltage-Min :

150 V

Package Shape :

RECTANGULAR

Package / Case :

TO-247-3

ECCN Code :

EAR99

Configuration :

Single

Turn-Off Delay Time :

110 ns

Length :

16.13 mm

Number of Terminals :

3

Number of Pins :

3

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Product Status :

Not For New Designs

Vgs(th) (Max) @ Id :

4V @ 8mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time :

60ns

Fall Time (Typ) :

45 ns

Power Dissipation-Max :

560W Tc

Terminal Position :

Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

150V

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

8 Weeks

Pin Count :

3

Drain-source On Resistance-Max :

0.0125Ohm

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

150V

Subcategory :

MOSFETs

Width :

5.21 mm

FET Feature :

--

Terminal Form :

THROUGH-HOLE

Published :

2000

Vgs (Max) :

±20V

Height :

21.34 mm

FET Type :

N-Channel

Tradename :

HyperFET

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation :

560W

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Continuous Drain Current (ID) :

150A

Series :

HiPerFET™

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

JESD-609 Code :

e1

Brand :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

RoHS :

Details

Transistor Type :

1 N-Channel

Surface Mount :

No

Power Dissipation (Max) :

560W (Tc)