IXFX150N15

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Mfr.Part #
IXFX150N15
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 150A PLUS247
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Packaging :
Tube
Continuous Drain Current (ID) :
150A
Published :
2000
Factory Lead Time :
8 Weeks
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
560W (Tc)
Brand :
IXYS
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Fall Time (Typ) :
45 ns
Number of Pins :
3
Height :
21.34 mm
Tradename :
HyperFET
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
110 ns
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 75A, 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Base Product Number :
IXFX150
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
600A
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e1
Product Category :
MOSFET
Product Status :
Not For New Designs
Drain to Source Voltage (Vdss) :
150V
Vgs(th) (Max) @ Id :
4V @ 8mA
Width :
5.21 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
THROUGH-HOLE
Mounting Style :
Through Hole
FET Feature :
--
Rise Time :
60ns
Length :
16.13 mm
Package :
Tube
Configuration :
Single
Power Dissipation-Max :
560W Tc
Mount :
Through Hole
Drain-source On Resistance-Max :
0.0125Ohm
Number of Channels :
1 Channel
Package Shape :
RECTANGULAR
Supplier Device Package :
PLUS247™-3
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
3000 mJ
JESD-30 Code :
R-PSIP-T3
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Series :
HiPerFET™
FET Type :
N-Channel
Package / Case :
TO-247-3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory :
MOSFETs
Vgs (Max) :
±20V
Number of Elements :
1
Pin Count :
3
Maximum Operating Temperature :
+ 150 C
Mounting Type :
Through Hole
Channel Mode :
Enhancement
Element Configuration :
Single
DS Breakdown Voltage-Min :
150 V
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
ECCN Code :
EAR99
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
RoHS Status :
RoHS Compliant
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
150V
Qualification Status :
Not Qualified
Terminal Position :
Single
Power Dissipation :
560W
Number of Terminations :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX150N15 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Package / Case:TO-247-3, Mounting Type:Through Hole, Number of Terminations:3, IXFX150N15 pinout, IXFX150N15 datasheet PDF, IXFX150N15 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX150N15 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX150N15


N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V TO-247-3

IXFX150N15 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX150N15 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)


IXFX150N15 Applications


There are a lot of IXYS
IXFX150N15 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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