IXFX150N15

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Turn-Off Delay Time :

110 ns

Supplier Device Package :

PLUS247™-3

Subcategory :

MOSFETs

Pin Count :

3

Package / Case :

TO-247-3

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.0125Ohm

Number of Pins :

3

Element Configuration :

Single

Base Product Number :

IXFX150

Package Shape :

RECTANGULAR

Rise Time :

60ns

Packaging :

Tube

Avalanche Energy Rating (Eas) :

3000 mJ

Reach Compliance Code :

Compliant

Series :

HiPerFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Continuous Drain Current (ID) :

150A

Number of Terminals :

3

Drain to Source Breakdown Voltage :

150V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Package :

Tube

Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 8mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Width :

5.21 mm

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 75A, 10V

JESD-609 Code :

e1

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Category :

MOSFET

Channel Mode :

Enhancement

Published :

2000

DS Breakdown Voltage-Min :

150 V

Product Status :

Not For New Designs

Lead Free :

Lead Free

Mount :

Through Hole

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Manufacturer :

IXYS

FET Feature :

--

Height :

21.34 mm

Drain to Source Voltage (Vdss) :

150V

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

560W Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

560W (Tc)

Gate to Source Voltage (Vgs) :

20V

Tradename :

HyperFET

Length :

16.13 mm

Transistor Polarity :

N-Channel

Fall Time (Typ) :

45 ns

Current - Continuous Drain (Id) @ 25°C :

150A Tc

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

600A

Power Dissipation :

560W

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V