IXFX150N15

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Mfr.Part #
IXFX150N15
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 150V 150A PLUS247
Stock
8,499
In Stock :
8,499

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Surface Mount :
No
Vgs(th) (Max) @ Id :
4V @ 8mA
Package / Case :
TO-247-3
FET Feature :
--
Tradename :
HyperFET
Transistor Application :
SWITCHING
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Minimum Operating Temperature :
- 55 C
Configuration :
Single
JESD-609 Code :
e1
Transistor Element Material :
SILICON
Mounting Style :
Through Hole
Supplier Device Package :
PLUS247™-3
Maximum Operating Temperature :
+ 150 C
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Continuous Drain Current (ID) :
150A
RoHS :
Details
Published :
2000
Rds On (Max) @ Id, Vgs :
12.5m Ω @ 75A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Product Category :
MOSFET
Case Connection :
DRAIN
Factory Lead Time :
8 Weeks
Turn-Off Delay Time :
110 ns
Mounting Type :
Through Hole
Brand :
IXYS
Pulsed Drain Current-Max (IDM) :
600A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Series :
HiPerFET™
Packaging :
Tube
Subcategory :
MOSFETs
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Fall Time (Typ) :
45 ns
Power Dissipation (Max) :
560W (Tc)
Width :
5.21 mm
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Drain to Source Breakdown Voltage :
150V
Power Dissipation-Max :
560W Tc
Element Configuration :
Single
Terminal Position :
Single
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Number of Channels :
1 Channel
Manufacturer :
IXYS
Product Status :
Not For New Designs
Qualification Status :
Not Qualified
Height :
21.34 mm
DS Breakdown Voltage-Min :
150 V
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
3000 mJ
JESD-30 Code :
R-PSIP-T3
Length :
16.13 mm
Number of Terminations :
3
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
150A Tc
Package :
Tube
Base Product Number :
IXFX150
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
60ns
Drain to Source Voltage (Vdss) :
150V
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Power Dissipation :
560W
Drain-source On Resistance-Max :
0.0125Ohm
Number of Terminals :
3
Pin Count :
3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFX150N15 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, IXFX150N15 pinout, IXFX150N15 datasheet PDF, IXFX150N15 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFX150N15 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFX150N15


N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V TO-247-3

IXFX150N15 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX150N15 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)


IXFX150N15 Applications


There are a lot of IXYS
IXFX150N15 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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