IXFX150N15
- Mfr.Part #
- IXFX150N15
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A PLUS247
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 150A
- Published :
- 2000
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- 1 N-Channel
- Power Dissipation (Max) :
- 560W (Tc)
- Brand :
- IXYS
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Fall Time (Typ) :
- 45 ns
- Number of Pins :
- 3
- Height :
- 21.34 mm
- Tradename :
- HyperFET
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 110 ns
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 75A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Base Product Number :
- IXFX150
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 600A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Product Category :
- MOSFET
- Product Status :
- Not For New Designs
- Drain to Source Voltage (Vdss) :
- 150V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Width :
- 5.21 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Form :
- THROUGH-HOLE
- Mounting Style :
- Through Hole
- FET Feature :
- --
- Rise Time :
- 60ns
- Length :
- 16.13 mm
- Package :
- Tube
- Configuration :
- Single
- Power Dissipation-Max :
- 560W Tc
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Number of Channels :
- 1 Channel
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- PLUS247™-3
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- JESD-30 Code :
- R-PSIP-T3
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Polarity/Channel Type :
- N-Channel
- Product Type :
- MOSFET
- Series :
- HiPerFET™
- FET Type :
- N-Channel
- Package / Case :
- TO-247-3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory :
- MOSFETs
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Pin Count :
- 3
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- DS Breakdown Voltage-Min :
- 150 V
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Surface Mount :
- No
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 150V
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Power Dissipation :
- 560W
- Number of Terminations :
- 3
- Datasheets
- IXFX150N15
IXFX150N15 Documents
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N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V TO-247-3
IXFX150N15 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX150N15 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)
IXFX150N15 Applications
There are a lot of IXYS
IXFX150N15 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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