IXFX150N15
- Mfr.Part #
- IXFX150N15
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A PLUS247
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- PLUS247™-3
- Power Dissipation :
- 560W
- Mounting Type :
- Through Hole
- DS Breakdown Voltage-Min :
- 150 V
- Product Type :
- MOSFET
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Channels :
- 1 Channel
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Tradename :
- HyperFET
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Width :
- 5.21 mm
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Number of Pins :
- 3
- Series :
- HiPerFET™
- Drain to Source Breakdown Voltage :
- 150V
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 600A
- Drain to Source Voltage (Vdss) :
- 150V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 560W (Tc)
- Fall Time (Typ) :
- 45 ns
- FET Type :
- N-Channel
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 60ns
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 110 ns
- JESD-609 Code :
- e1
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSIP-T3
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 75A, 10V
- Product Status :
- Not For New Designs
- Channel Mode :
- Enhancement
- Power Dissipation-Max :
- 560W Tc
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 150A
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 20V
- FET Feature :
- --
- Package / Case :
- TO-247-3
- Number of Terminals :
- 3
- Number of Terminations :
- 3
- Brand :
- IXYS
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFX150
- Minimum Operating Temperature :
- - 55 C
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Length :
- 16.13 mm
- Height :
- 21.34 mm
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Published :
- 2000
- Datasheets
- IXFX150N15
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N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V TO-247-3
IXFX150N15 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX150N15 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)
IXFX150N15 Applications
There are a lot of IXYS
IXFX150N15 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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