IXFX150N15
- Mfr.Part #
- IXFX150N15
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A PLUS247
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Package / Case :
- TO-247-3
- FET Feature :
- --
- Tradename :
- HyperFET
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- Single
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Mounting Style :
- Through Hole
- Supplier Device Package :
- PLUS247™-3
- Maximum Operating Temperature :
- + 150 C
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Continuous Drain Current (ID) :
- 150A
- RoHS :
- Details
- Published :
- 2000
- Rds On (Max) @ Id, Vgs :
- 12.5m Ω @ 75A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- Turn-Off Delay Time :
- 110 ns
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 600A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™
- Packaging :
- Tube
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 45 ns
- Power Dissipation (Max) :
- 560W (Tc)
- Width :
- 5.21 mm
- Vgs (Max) :
- ±20V
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 150V
- Power Dissipation-Max :
- 560W Tc
- Element Configuration :
- Single
- Terminal Position :
- Single
- Reach Compliance Code :
- Compliant
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Product Status :
- Not For New Designs
- Qualification Status :
- Not Qualified
- Height :
- 21.34 mm
- DS Breakdown Voltage-Min :
- 150 V
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- JESD-30 Code :
- R-PSIP-T3
- Length :
- 16.13 mm
- Number of Terminations :
- 3
- Terminal Form :
- THROUGH-HOLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Package :
- Tube
- Base Product Number :
- IXFX150
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 60ns
- Drain to Source Voltage (Vdss) :
- 150V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Power Dissipation :
- 560W
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Number of Terminals :
- 3
- Pin Count :
- 3
- Datasheets
- IXFX150N15
IXFX150N15 Documents
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N-Channel Tube 12.5m Ω @ 75A, 10V ±20V 9100pF @ 25V 360nC @ 10V 150V TO-247-3
IXFX150N15 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 150A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=150V. And this device has 150V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 600A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 150 V in order to maintain normal operation.Operating this transistor requires a 150V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFX150N15 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 600A.
a 150V drain to source voltage (Vdss)
IXFX150N15 Applications
There are a lot of IXYS
IXFX150N15 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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