IRLBA3803P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

610 mJ

Terminal Position :

Single

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

179A Tc

Terminal Finish :

MATTE TIN OVER NICKEL

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

179A

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Published :

2002

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

250

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5m Ω @ 71A, 10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.005ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

720A

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Series :

HEXFET®

JESD-609 Code :

e3

Packaging :

Tube

Qualification Status :

Not Qualified

Package / Case :

TO-273AA

Power Dissipation-Max :

270W Tc

Mounting Type :

Through Hole