IRLBA1304P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Drain-source On Resistance-Max :

0.004ohm

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

4m Ω @ 110A, 10V

Terminal Finish :

MATTE TIN OVER NICKEL

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1999

Number of Terminations :

3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

185A Tc

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Vgs (Max) :

±16V

Power Dissipation-Max :

300W Tc

Peak Reflow Temperature (Cel) :

250

Avalanche Energy Rating (Eas) :

1160 mJ

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

95A

DS Breakdown Voltage-Min :

40V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7660pF @ 25V

Case Connection :

DRAIN

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

740A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Package / Case :

TO-273AA