IRLB4030PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Resistance :

4.3mOhm

Number of Terminations :

3

Power Dissipation :

370W

Packaging :

Tube

Turn-Off Delay Time :

110 ns

Termination :

Through Hole

Fall Time (Typ) :

170 ns

Factory Lead Time :

12 Weeks

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

ECCN Code :

EAR99

Turn On Delay Time :

74 ns

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

180A

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Height :

15.24mm

Nominal Vgs :

2.5 V

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Threshold Voltage :

2.5V

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Mounting Type :

Through Hole

Rise Time :

330ns

Published :

2009

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Through Hole

Length :

10.5156mm

Power Dissipation-Max :

370W Tc

Series :

HEXFET®