IRLB4030PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Width :

4.69mm

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Length :

10.5156mm

Height :

15.24mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

12 Weeks

Threshold Voltage :

2.5V

Dual Supply Voltage :

100V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

11360pF @ 50V

Power Dissipation :

370W

Power Dissipation-Max :

370W Tc

Vgs (Max) :

±16V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Transistor Application :

SWITCHING

Resistance :

4.3mOhm

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

Through Hole

ECCN Code :

EAR99

Rise Time :

330ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2.5 V

Continuous Drain Current (ID) :

180A

Turn On Delay Time :

74 ns

Fall Time (Typ) :

170 ns

Rds On (Max) @ Id, Vgs :

4.3m Ω @ 110A, 10V

Number of Terminations :

3

Element Configuration :

Single

Series :

HEXFET®

Packaging :

Tube

Turn-Off Delay Time :

110 ns