IRLB8314PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Power Dissipation-Max :

125W Tc

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.2V @ 100μA

Continuous Drain Current (ID) :

130A

REACH SVHC :

No SVHC

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

5050pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 68A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

Mount :

Through Hole

Threshold Voltage :

1.7V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V