IRLB3034PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2.5V

Height :

19.8mm

Turn On Delay Time :

65 ns

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

40V

Continuous Drain Current (ID) :

195A

Lead Free :

Lead Free

Mounting Type :

Through Hole

Packaging :

Tube

Fall Time (Typ) :

355 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

162nC @ 4.5V

Avalanche Energy Rating (Eas) :

255 mJ

Power Dissipation-Max :

375W Tc

REACH SVHC :

No SVHC

FET Type :

N-Channel

Published :

2009

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 195A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

1.7MOhm

Length :

10.5156mm

Number of Terminations :

3

Width :

4.699mm

Input Capacitance (Ciss) (Max) @ Vds :

10315pF @ 25V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Number of Elements :

1

Turn-Off Delay Time :

97 ns

ECCN Code :

EAR99

Power Dissipation :

375W

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Max Junction Temperature (Tj) :

175°C

Number of Channels :

1

Rise Time :

827ns

Series :

HEXFET®

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant