IRLB3036PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

220ns

Number of Terminations :

3

Continuous Drain Current (ID) :

195A

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 4.5V

Avalanche Energy Rating (Eas) :

290 mJ

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Lead Free :

Lead Free

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

REACH SVHC :

No SVHC

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Packaging :

Tube

Number of Pins :

3

Length :

10.5156mm

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 165A, 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

110 ns

Package / Case :

TO-220-3

Threshold Voltage :

2.5V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Resistance :

2.4MOhm

Power Dissipation :

380W

Input Capacitance (Ciss) (Max) @ Vds :

11210pF @ 50V

JEDEC-95 Code :

TO-220AB

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

9.02mm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

66 ns

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

270A

Power Dissipation-Max :

380W Tc

Width :

4.699mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED