IRLB3813PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

230W Tc

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.35V @ 150μA

FET Type :

N-Channel

Contact Plating :

Tin

Termination :

Through Hole

Rise Time :

170ns

ECCN Code :

EAR99

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

260A Tc

Pulsed Drain Current-Max (IDM) :

1050A

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

260A

Number of Elements :

1

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.95m Ω @ 60A, 10V

Avalanche Energy Rating (Eas) :

520 mJ

Input Capacitance (Ciss) (Max) @ Vds :

8420pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Resistance :

1.95mOhm

Transistor Element Material :

SILICON

Fall Time (Typ) :

60 ns

Length :

10.668mm

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Vgs (Max) :

±20V

Element Configuration :

Single

Radiation Hardening :

No

Published :

2009

Turn-Off Delay Time :

33 ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 4.5V

Threshold Voltage :

1.9V

Recovery Time :

36 ns

Turn On Delay Time :

36 ns

Series :

HEXFET®

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

120A

Nominal Vgs :

1.9 V

Dual Supply Voltage :

30V

Power Dissipation :

230W

Width :

4.826mm

Height :

9.02mm

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE