IRL1404PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.3V 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Number of Elements :

1

Turn On Delay Time :

18 ns

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Element Configuration :

Single

Transistor Application :

SWITCHING

Published :

2004

Width :

4.69mm

Number of Terminations :

3

Power Dissipation :

200W

Mount :

Through Hole

Resistance :

4mOhm

Number of Pins :

3

Height :

15.24mm

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Length :

10.5156mm

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

Voltage - Rated DC :

40V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

200W Tc

Avalanche Energy Rating (Eas) :

620 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

6590pF @ 25V

Turn-Off Delay Time :

38 ns

Drain to Source Breakdown Voltage :

40V

Threshold Voltage :

3V

Pulsed Drain Current-Max (IDM) :

640A

Rise Time :

270ns

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 5V

Recovery Time :

94 ns

Fall Time (Typ) :

37 ns

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

160A

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Current Rating :

160A

Series :

HEXFET®