IRL1004PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Turn-Off Delay Time :

25 ns

Power Dissipation :

200W

Length :

10.6426mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

Continuous Drain Current (ID) :

130A

Vgs (Max) :

±16V

ECCN Code :

EAR99

Rise Time :

210ns

Mounting Type :

Through Hole

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1V

Width :

4.82mm

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

200W Tc

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Packaging :

Tube

FET Type :

N-Channel

Turn On Delay Time :

16 ns

Height :

8.77mm

Gate to Source Voltage (Vgs) :

16V

REACH SVHC :

No SVHC

Current Rating :

130A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1 V

Voltage - Rated DC :

40V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Pulsed Drain Current-Max (IDM) :

520A

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

Termination :

Through Hole

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Number of Pins :

3

Mount :

Through Hole

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

14 ns

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Resistance :

6.5mOhm

Published :

2004

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

700 mJ

Factory Lead Time :

12 Weeks