IRL1004SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

700 mJ

Threshold Voltage :

1V

JESD-609 Code :

e3

Current Rating :

130A

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

ECCN Code :

EAR99

Rise Time :

210ns

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Turn-Off Delay Time :

25 ns

Nominal Vgs :

1 V

Fall Time (Typ) :

14 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Height :

4.83mm

Power Dissipation-Max :

3.8W Ta 200W Tc

Published :

2004

Voltage - Rated DC :

40V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Recovery Time :

120 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

9.65mm

FET Type :

N-Channel

Continuous Drain Current (ID) :

130A

Power Dissipation :

3.1W

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

520A

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

6.5mOhm

REACH SVHC :

No SVHC

Vgs (Max) :

±16V

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Length :

10.67mm

Packaging :

Tube

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Radiation Hardening :

No

Element Configuration :

Single

Number of Terminations :

2

Lead Free :

Lead Free

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

16V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V