IRL1104PBF
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- Mfr.Part #
- IRL1104PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 104A TO220AB
- Stock
- 11,297
- In Stock ：
- 11,297
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Max Operating Temperature :
- 175°C
- Current Rating :
- 104A
- Rise Time :
- 257ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 104A Tc
- Nominal Vgs :
- 1 V
- Published :
- 2004
- Rds On (Max) @ Id, Vgs :
- 8mOhm @ 62A, 10V
- Packaging :
- Tube
- Min Operating Temperature :
- -55°C
- Termination :
- Through Hole
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- TO-220AB
- Turn On Delay Time :
- 18 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- HEXFET®
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Dual Supply Voltage :
- 40V
- Height :
- 8.77mm
- Turn-Off Delay Time :
- 32 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 4.5V
- Rds On Max :
- 8 mΩ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3445pF @ 25V
- Fall Time (Typ) :
- 64 ns
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance :
- 3.445nF
- Gate to Source Voltage (Vgs) :
- 16V
- Lead Free :
- Lead Free
- Drain to Source Resistance :
- 12mOhm
- Element Configuration :
- Single
- Power Dissipation :
- 167W
- Vgs (Max) :
- ±16V
- Voltage - Rated DC :
- 40V
- Recovery Time :
- 126 ns
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 40V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 104A
- Power Dissipation-Max :
- 167W Tc
- Datasheets
- IRL1104PBF
N-Channel Tube 8mOhm @ 62A, 10V ±16V 3445pF @ 25V 68nC @ 4.5V 40V TO-220-3
IRL1104PBF Overview
A device's maximum input capacitance is 3445pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 104A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 12mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRL1104PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 12mOhm
a 40V drain to source voltage (Vdss)
IRL1104PBF Applications
There are a lot of Infineon Technologies
IRL1104PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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