IRL1104

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3445pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Series :

HEXFET®

Qualification Status :

Not Qualified

Packaging :

Tube

Terminal Position :

Single

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

340 mJ

Drain-source On Resistance-Max :

0.008Ohm

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drain Current-Max (Abs) (ID) :

104A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

167W Tc

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Published :

1999

Terminal Finish :

MATTE TIN OVER NICKEL

Terminal Form :

Gull wing

Vgs (Max) :

±16V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

104A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

416A