IRL1004S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

520A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

700 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0065ohm

JESD-609 Code :

e0

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

130A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5330pF @ 25V

Peak Reflow Temperature (Cel) :

225

Packaging :

Tube

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

40V

Number of Elements :

1

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Case Connection :

DRAIN

Vgs (Max) :

±16V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Power Dissipation-Max :

3.8W Ta 200W Tc

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Published :

1999

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 78A, 10V

RoHS Status :

Non-RoHS Compliant