IRGSL30B60KPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Fall Time-Max (tf) :

42ns

Max Collector Current :

78A

ECCN Code :

EAR99

Number of Pins :

3

Transistor Element Material :

SILICON

Gate Charge :

102nC

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

IGBT Type :

NPT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

11 Weeks

Test Condition :

400V, 30A, 10 Ω, 15V

Number of Elements :

1

Turn On Time :

74 ns

Gate-Emitter Thr Voltage-Max :

5.5V

Published :

2005

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

2.35V

Length :

10.668mm

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

120A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

370W

Time@Peak Reflow Temperature-Max (s) :

30

Width :

4.826mm

Turn Off Time-Nom (toff) :

237 ns

Weight :

2.084002g

Switching Energy :

350μJ (on), 825μJ (off)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Gate-Emitter Voltage-Max :

20V

Td (on/off) @ 25°C :

46ns/185ns

Case Connection :

COLLECTOR

Element Configuration :

Single

Height :

9.652mm

Mount :

Through Hole

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Max Power Dissipation :

370W

Collector Emitter Voltage (VCEO) :

2.35V