IRGSL30B60KPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

Motor Control

Current - Collector Pulsed (Icm) :

120A

Length :

10.668mm

Switching Energy :

350μJ (on), 825μJ (off)

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Collector Emitter Saturation Voltage :

2.35V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate Charge :

102nC

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Power Dissipation :

370W

Packaging :

Tube

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Weight :

2.084002g

Input Type :

Standard

Td (on/off) @ 25°C :

46ns/185ns

Test Condition :

400V, 30A, 10 Ω, 15V

Turn Off Time-Nom (toff) :

237 ns

Turn On Time :

74 ns

Factory Lead Time :

11 Weeks

Height :

9.652mm

ECCN Code :

EAR99

Fall Time-Max (tf) :

42ns

Published :

2005

Max Power Dissipation :

370W

Mounting Type :

Through Hole

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

2.35V

Max Collector Current :

78A

Mount :

Through Hole

RoHS Status :

RoHS Compliant

IGBT Type :

NPT

Element Configuration :

Single

Case Connection :

COLLECTOR

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

5.5V