IRGS15B60KDPBF
- Mfr.Part #
- IRGS15B60KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 21,794
- In Stock :
- 21,794
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- IGBT Type :
- NPT
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 208W
- Length :
- 10.668mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Power Dissipation :
- 139W
- Number of Terminations :
- 2
- Switching Energy :
- 220μJ (on), 340μJ (off)
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Reverse Recovery Time :
- 92 ns
- Turn Off Time-Nom (toff) :
- 231 ns
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 15A
- Transistor Application :
- Motor Control
- Gate Charge :
- 56nC
- Additional Feature :
- ULTRA FAST
- Current - Collector Pulsed (Icm) :
- 62A
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Height :
- 4.572mm
- Turn On Time :
- 52 ns
- Gate-Emitter Voltage-Max :
- 20V
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 1.8V
- Rise Time-Max :
- 25ns
- Td (on/off) @ 25°C :
- 34ns/184ns
- Peak Reflow Temperature (Cel) :
- 260
- Input Type :
- Standard
- Factory Lead Time :
- 16 Weeks
- Max Collector Current :
- 31A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Power - Max :
- 208W
- Width :
- 9.652mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Test Condition :
- 400V, 15A, 22 Ω, 15V
- Terminal Form :
- Gull wing
- Published :
- 2004
- Base Part Number :
- IRGS15B60KDPBF
- RoHS Status :
- RoHS Compliant
- Datasheets
- IRGS15B60KDPBF

IRGS15B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS15B60KDPBF Features
Low VCE (on) Non-Punch Through IGBT Technology
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free
IRGS15B60KDPBF Benefits
Bench ark Efficiency for Motor Control
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
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