IRGS4615DPBF
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- Mfr.Part #
- IRGS4615DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 711
- In Stock ：
- 711
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- JESD-609 Code :
- e3
- Operating Temperature :
- -40°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge :
- 19nC
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Gate-Emitter Voltage-Max :
- 20V
- Switching Energy :
- 70μJ (on), 145μJ (off)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Element Configuration :
- Single
- Input Type :
- Standard
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 1.85V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Current - Collector Pulsed (Icm) :
- 24A
- Length :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 23A
- Mount :
- Surface Mount
- Power - Max :
- 99W
- Collector Emitter Breakdown Voltage :
- 600V
- REACH SVHC :
- No SVHC
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Collector Emitter Saturation Voltage :
- 1.55V
- Factory Lead Time :
- 10 Weeks
- Height :
- 4.83mm
- Test Condition :
- 400V, 8A, 47 Ω, 15V
- Packaging :
- Tube
- Vce(on) (Max) @ Vge, Ic :
- 1.85V @ 15V, 8A
- Max Power Dissipation :
- 99W
- Weight :
- 260.39037mg
- Width :
- 9.65mm
- Reverse Recovery Time :
- 60 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Td (on/off) @ 25°C :
- 30ns/95ns
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRGS4615DPBF
IRGS4615DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGS4615DPBF Description
IRGS4615DPBF is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Infineon IRGS4615DPBF provides high efficiency in a wide range of applications and switching frequencies, and improved reliability due to rugged hard switching performance and higher power capability. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGS4615DPBF is in the D2-Pak package with 99W power dissipation.
IRGS4615DPBF Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter distribution of parameters
5μs short circuit SOA
Lead-free, RoHS compliant
IRGS4615DPBF Applications
Appliance Drives
Inverters
UPS
Communications equipment
Datacom module
Enterprise systems
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