IRGP50B60PDPBF
- Mfr.Part #
- IRGP50B60PDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- AUTOMOTIVE WARP2 IGBT ULTRAFAST
- Stock
- 21,983
- In Stock :
- 21,983
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Package / Case :
- TO-247-3
- Max Collector Current :
- 75A
- Transistor Application :
- POWER CONTROL
- Current Rating :
- 75A
- Turn Off Time-Nom (toff) :
- 190 ns
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Input Type :
- Standard
- Turn On Delay Time :
- 33 ns
- JEDEC-95 Code :
- TO-247AC
- Max Power Dissipation :
- 370W
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Td (on/off) @ 25°C :
- 34ns/130ns
- Width :
- 5.3086mm
- Reverse Recovery Time :
- 50 ns
- RoHS Status :
- ROHS3 Compliant
- Gate Charge :
- 240nC
- Rise Time :
- 26ns
- Turn-Off Delay Time :
- 140 ns
- Packaging :
- Bulk
- Continuous Collector Current :
- 75A
- Switching Energy :
- 360μJ (on), 380μJ (off)
- Published :
- 2004
- Polarity/Channel Type :
- N-Channel
- Contact Plating :
- Tin
- Max Junction Temperature (Tj) :
- 150°C
- Height :
- 24.99mm
- Power Dissipation :
- 370W
- Factory Lead Time :
- 14 Weeks
- Gate-Emitter Voltage-Max :
- 20V
- Voltage - Rated DC :
- 600V
- IGBT Type :
- NPT
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 600V
- Fall Time-Max (tf) :
- 65ns
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 50A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- Number of Terminations :
- 3
- Test Condition :
- 390V, 33A, 3.3 Ω, 15V
- REACH SVHC :
- No SVHC
- Length :
- 15.87mm
- Turn On Time :
- 59 ns
- Current - Collector Pulsed (Icm) :
- 150A
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Weight :
- 38.000013g
- Gate-Emitter Thr Voltage-Max :
- 5V
- Datasheets
- IRGP50B60PDPBF

IRGP50B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP50B60PDPBF is a type of Rectifier. It has the following characteristics: NPT Technology, Positive Temperature Coefficient, Lower VCE(SAT), Lower Parasitic Capacitances. It is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Uninterruptable Power Supplies, Consumer Electronics Power Supplies.
IRGP50B60PDPBF Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
IRGP50B60PDPBF Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead- Free
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