IRGP20B60PDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

95μJ (on), 100μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

80A

Input Type :

Standard

Number of Pins :

3

Rise Time :

5ns

Current Rating :

40A

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 20A

Mount :

Through Hole

Width :

5.3mm

Number of Elements :

1

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Terminations :

3

Collector Emitter Saturation Voltage :

2.05V

Reverse Recovery Time :

42 ns

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Element Configuration :

Single

Td (on/off) @ 25°C :

20ns/115ns

Length :

15.9mm

Lead Free :

Lead Free

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

2.8V

Turn On Delay Time :

20 ns

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

138 ns

Test Condition :

390V, 13A, 10 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

220W

Turn On Time :

25 ns

Published :

2003

Gate-Emitter Voltage-Max :

20V

Termination :

Through Hole

Max Collector Current :

40A

Transistor Application :

POWER CONTROL

Factory Lead Time :

14 Weeks

Gate-Emitter Thr Voltage-Max :

5V

Turn-Off Delay Time :

115 ns

Package / Case :

TO-247-3

Gate Charge :

68nC

Fall Time-Max (tf) :

17ns

IGBT Type :

NPT

Height :

20.3mm

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Power Dissipation :

220W