IRGP35B60PDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Published :

2000

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Power Dissipation :

308W

Package / Case :

TO-247-3

Rise Time :

6ns

Max Power Dissipation :

308W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

120A

Width :

5.3086mm

Mounting Type :

Through Hole

Height :

20.7mm

Current Rating :

60A

Transistor Element Material :

SILICON

Turn On Delay Time :

26 ns

Vce(on) (Max) @ Vge, Ic :

2.55V @ 15V, 35A

Element Configuration :

Single

Reverse Recovery Time :

42 ns

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1.85V

Turn On Time :

34 ns

Collector Emitter Voltage (VCEO) :

2.55V

Factory Lead Time :

14 Weeks

Termination :

Through Hole

Number of Terminations :

3

ECCN Code :

EAR99

Turn-Off Delay Time :

110 ns

IGBT Type :

NPT

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-247AC

Voltage - Rated DC :

600V

Lead Free :

Lead Free

Max Collector Current :

60A

Input Type :

Standard

Turn Off Time-Nom (toff) :

142 ns

Mount :

Through Hole

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

5V

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Test Condition :

390V, 22A, 3.3 Ω, 15V

Td (on/off) @ 25°C :

26ns/110ns

Gate Charge :

160nC

Length :

15.87mm

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Switching Energy :

220μJ (on), 215μJ (off)

Number of Pins :

3