IRGP35B60PDPBF

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Mfr.Part #
IRGP35B60PDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 60A 308W TO247AC
Stock
5,225
In Stock :
5,225

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Gate Charge :
160nC
Number of Elements :
1
Test Condition :
390V, 22A, 3.3 Ω, 15V
Rise Time :
6ns
Element Configuration :
Single
Number of Pins :
3
Turn On Delay Time :
26 ns
Mount :
Through Hole
Input Type :
Standard
Packaging :
Bulk
Package / Case :
TO-247-3
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Gate-Emitter Thr Voltage-Max :
5V
Turn On Time :
34 ns
Transistor Application :
POWER CONTROL
Current Rating :
60A
Td (on/off) @ 25°C :
26ns/110ns
Voltage - Rated DC :
600V
Collector Emitter Voltage (VCEO) :
2.55V
Vce(on) (Max) @ Vge, Ic :
2.55V @ 15V, 35A
Turn-Off Delay Time :
110 ns
Polarity/Channel Type :
N-Channel
IGBT Type :
NPT
Power Dissipation :
308W
Reverse Recovery Time :
42 ns
Switching Energy :
220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-247AC
Transistor Element Material :
SILICON
Published :
2000
Collector Emitter Breakdown Voltage :
600V
Factory Lead Time :
14 Weeks
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Turn Off Time-Nom (toff) :
142 ns
Width :
5.3086mm
Max Collector Current :
60A
Max Power Dissipation :
308W
Additional Feature :
HIGH RELIABILITY, LOW CONDUCTION LOSS
Number of Terminations :
3
Length :
15.87mm
Height :
20.7mm
Termination :
Through Hole
Current - Collector Pulsed (Icm) :
120A
Collector Emitter Saturation Voltage :
1.85V
Introducing Transistors - IGBTs - Single Infineon Technologies IRGP35B60PDPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IRGP35B60PDPBF pinout, IRGP35B60PDPBF datasheet PDF, IRGP35B60PDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRGP35B60PDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRGP35B60PDPBF


IRGP35B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Description


The IRGP35B60PDPBF is a warp2 series IGBT with an ultrafast soft recovery diode. What is the purpose of a recovery diode? In most cases, rapid recovery diodes are employed for rectification. A low-frequency AC (sine) signal becomes a DC signal when it is converted. The time duration of a low-frequency signal is long. This indicates that the signal will take longer to complete its cycle.



Features


? Minimal Tail Current

? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode

? Tighter Distribution of Parameters

? Higher Reliability

? NPT Technology, Positive Temperature Coefficient

? Lower VCE(SAT)

? Lower Parasitic Capacitances



Applications


? Uninterruptable Power Supplies

? Consumer Electronics Power Supplies

? Lead-Free

? Telecom and Server SMPS

? PFC and ZVS SMPS Circuits


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