IRGP35B60PDPBF
- Mfr.Part #
- IRGP35B60PDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 60A 308W TO247AC
- Stock
- 5,225
- In Stock :
- 5,225
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Switching Energy :
- 220μJ (on), 215μJ (off)
- Collector Emitter Breakdown Voltage :
- 600V
- Voltage - Rated DC :
- 600V
- Max Power Dissipation :
- 308W
- Transistor Element Material :
- SILICON
- IGBT Type :
- NPT
- Number of Elements :
- 1
- Factory Lead Time :
- 14 Weeks
- Gate-Emitter Thr Voltage-Max :
- 5V
- REACH SVHC :
- No SVHC
- Length :
- 15.87mm
- Input Type :
- Standard
- Current - Collector Pulsed (Icm) :
- 120A
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 142 ns
- JEDEC-95 Code :
- TO-247AC
- Published :
- 2000
- Number of Terminations :
- 3
- Gate Charge :
- 160nC
- Power Dissipation :
- 308W
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Width :
- 5.3086mm
- Vce(on) (Max) @ Vge, Ic :
- 2.55V @ 15V, 35A
- Collector Emitter Saturation Voltage :
- 1.85V
- Package / Case :
- TO-247-3
- Transistor Application :
- POWER CONTROL
- Case Connection :
- COLLECTOR
- Reverse Recovery Time :
- 42 ns
- Test Condition :
- 390V, 22A, 3.3 Ω, 15V
- Termination :
- Through Hole
- Additional Feature :
- HIGH RELIABILITY, LOW CONDUCTION LOSS
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 110 ns
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 2.55V
- Lead Free :
- Lead Free
- Current Rating :
- 60A
- Td (on/off) @ 25°C :
- 26ns/110ns
- Turn On Delay Time :
- 26 ns
- Turn On Time :
- 34 ns
- Rise Time :
- 6ns
- ECCN Code :
- EAR99
- Max Collector Current :
- 60A
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Height :
- 20.7mm
- Element Configuration :
- Single
- Datasheets
- IRGP35B60PDPBF
IRGP35B60PDPBF Documents

IRGP35B60PDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRGP35B60PDPBF is a warp2 series IGBT with an ultrafast soft recovery diode. What is the purpose of a recovery diode? In most cases, rapid recovery diodes are employed for rectification. A low-frequency AC (sine) signal becomes a DC signal when it is converted. The time duration of a low-frequency signal is long. This indicates that the signal will take longer to complete its cycle.
Features
? Minimal Tail Current
? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
? Tighter Distribution of Parameters
? Higher Reliability
? NPT Technology, Positive Temperature Coefficient
? Lower VCE(SAT)
? Lower Parasitic Capacitances
Applications
? Uninterruptable Power Supplies
? Consumer Electronics Power Supplies
? Lead-Free
? Telecom and Server SMPS
? PFC and ZVS SMPS Circuits
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