IRGP35B60PDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Rise Time :

6ns

Transistor Application :

POWER CONTROL

Collector Emitter Voltage (VCEO) :

2.55V

Switching Energy :

220μJ (on), 215μJ (off)

Turn Off Time-Nom (toff) :

142 ns

Current Rating :

60A

JEDEC-95 Code :

TO-247AC

Input Type :

Standard

Published :

2000

Packaging :

Bulk

Gate-Emitter Thr Voltage-Max :

5V

Vce(on) (Max) @ Vge, Ic :

2.55V @ 15V, 35A

Lead Free :

Lead Free

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Max Power Dissipation :

308W

Case Connection :

COLLECTOR

Test Condition :

390V, 22A, 3.3 Ω, 15V

Turn On Delay Time :

26 ns

Additional Feature :

HIGH RELIABILITY, LOW CONDUCTION LOSS

Power Dissipation :

308W

ECCN Code :

EAR99

Height :

20.7mm

Reverse Recovery Time :

42 ns

Number of Terminations :

3

Radiation Hardening :

No

Termination :

Through Hole

Width :

5.3086mm

Factory Lead Time :

14 Weeks

Package / Case :

TO-247-3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Element Configuration :

Single

Turn On Time :

34 ns

Turn-Off Delay Time :

110 ns

RoHS Status :

ROHS3 Compliant

IGBT Type :

NPT

Mounting Type :

Through Hole

Gate-Emitter Voltage-Max :

20V

REACH SVHC :

No SVHC

Max Collector Current :

60A

Td (on/off) @ 25°C :

26ns/110ns

Gate Charge :

160nC

Current - Collector Pulsed (Icm) :

120A

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.85V

Length :

15.87mm

Collector Emitter Breakdown Voltage :

600V

Mount :

Through Hole