IRGP4640-EPBF
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- Mfr.Part #
- IRGP4640-EPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT
- Stock
- 22,211
- In Stock ：
- 22,211
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Td (on/off) @ 25°C :
- 40ns/105ns
- Input Type :
- Standard
- Operating Temperature :
- -40°C~175°C TJ
- Current - Collector Pulsed (Icm) :
- 72A
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1.6V
- Collector Emitter Voltage (VCEO) :
- 1.9V
- Max Power Dissipation :
- 250W
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Breakdown Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 24A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2013
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Gate Charge :
- 75nC
- Fall Time-Max (tf) :
- 40ns
- Max Collector Current :
- 65A
- Gate-Emitter Voltage-Max :
- 20V
- Switching Energy :
- 100μJ (on), 600μJ (off)
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Mount :
- Through Hole
- Power - Max :
- 250W
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Base Part Number :
- IRGP4640
- Test Condition :
- 400V, 24A, 10 Ω, 15V
- Datasheets
- IRGP4640-EPBF
IRGP4640-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4640-EPBF Description
The IRGP4640-EPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGP4640-EPBF Features
-
tSC ≥ 5μs, TJ(max) = 175°C
-
VCE(on) typ. = 1.60V @ IC = 24A
-
VCES = 600V
-
IC = 40A, TC = 100°C
-
Low VCE(ON) and switching losses
-
Lead-Free, RoHS Compliant
IRGP4640-EPBF Applications
-
Inverters
-
UPS
-
Welding
-
Industrial Motor Drive
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