IRGP4263PBF

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Mfr.Part #
IRGP4263PBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRAFAST SOFT RECOVERY D
Stock
6,296
In Stock :
6,296

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Number of Pins :
3
ECCN Code :
EAR99
Gate Charge :
150nC
Operating Temperature :
-40°C~175°C TJ
Td (on/off) @ 25°C :
70ns/140ns
Polarity/Channel Type :
N-Channel
Radiation Hardening :
No
REACH SVHC :
No SVHC
Test Condition :
400V, 48A, 10 Ω, 15V
Current - Collector Pulsed (Icm) :
192A
Mounting Type :
Through Hole
Element Configuration :
Single
Weight :
38.000013g
Max Collector Current :
90A
Max Power Dissipation :
300W
Collector Emitter Voltage (VCEO) :
2.1V
Switching Energy :
1.7mJ (on), 1mJ (off)
Input Type :
Standard
RoHS Status :
RoHS Compliant
Power - Max :
300W
Collector Emitter Breakdown Voltage :
650V
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 48A
Gate-Emitter Thr Voltage-Max :
7.7V
Mount :
Through Hole
Factory Lead Time :
14 Weeks
Width :
5.2mm
Gate-Emitter Voltage-Max :
20V
Packaging :
Tube
Collector Emitter Saturation Voltage :
1.7V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time-Max :
80ns
Fall Time-Max (tf) :
50ns
Lead Free :
Lead Free
Height :
21.1mm
Published :
2012
Length :
16.13mm
Package / Case :
TO-247-3
Datasheets
IRGP4263PBF
Introducing Transistors - IGBTs - Single International Rectifier IRGP4263PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, IRGP4263PBF pinout, IRGP4263PBF datasheet PDF, IRGP4263PBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRGP4263PBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRGP4263PBF


IRGP4263PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4263PBF Description


The IRGP4263PBF is an IGBT 650 V 90 A 300 W Through Hole TO-247AC. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low-voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.



IRGP4263PBF Features


  • VCES = 650V

  • IC = 60A, TC =100°C

  • tSC ≥ 5.5μs, TJ(max) = 175°C

  • VCE(ON) typ. = 1.7V @ IC = 48A

  • Low VCE(ON) and switching losses

  • Square RBSOA and maximum junction temperature 175°C

  • Positive VCE (ON) temperature coefficient

  • 5.5μs short circuit SOA

  • Lead-free, RoHS compliant



IRGP4263PBF Applications


  • UPS

  • Welding

  • Industrial Motor Drive

  • Inverters


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