IRGP4263DPBF

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Mfr.Part #
IRGP4263DPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT W/ULTRAFAST SOFT RECOVERY D
Stock
250
In Stock :
250

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Number of Pins :
3
Radiation Hardening :
No
Td (on/off) @ 25°C :
70ns/140ns
Power - Max :
325W
Packaging :
Tube
Rise Time-Max :
80ns
Operating Temperature :
-40°C~175°C TJ
Gate-Emitter Thr Voltage-Max :
7.7V
Collector Emitter Voltage (VCEO) :
2.1V
Current - Collector Pulsed (Icm) :
192A
Mount :
Through Hole
Max Power Dissipation :
325W
Polarity/Channel Type :
N-Channel
Published :
2001
Switching Energy :
2.9mJ (on), 1.4mJ (off)
Factory Lead Time :
14 Weeks
Reverse Recovery Time :
170 ns
Package / Case :
TO-247-3
Lead Free :
Lead Free
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 48A
Gate Charge :
145nC
Fall Time-Max (tf) :
50ns
Mounting Type :
Through Hole
REACH SVHC :
No SVHC
Collector Emitter Saturation Voltage :
1.7V
Gate-Emitter Voltage-Max :
20V
Input Type :
Standard
Max Collector Current :
90A
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Test Condition :
400V, 48A, 10 Ω, 15V
Collector Emitter Breakdown Voltage :
650V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRGP4263DPBF
Introducing Transistors - IGBTs - Single International Rectifier IRGP4263DPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-40°C~175°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, IRGP4263DPBF pinout, IRGP4263DPBF datasheet PDF, IRGP4263DPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRGP4263DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRGP4263DPBF


IRGP4263DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGP4263DPBF Description


IRGP4263DPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. IRGP4263DPBF half-bridge gate driver is utilized in a wide range of applications, from isolated dc-to-dc power supply modules that demand high power density and efficiency to solar inverters that require high isolation voltage and long-term dependability.


IRGP4263DPBF Features


Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20 V
Undervoltage lockout


IRGP4263DPBF Applications


Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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