IRGP4072DPBF
- Mfr.Part #
- IRGP4072DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRGP4072D - IGBT WITH ULTRAFAST
- Stock
- 2,580
- In Stock :
- 2,580
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 180W
- Collector Emitter Breakdown Voltage :
- 300V
- Polarity/Channel Type :
- N-Channel
- Max Collector Current :
- 70A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-247AC
- Transistor Element Material :
- SILICON
- Fall Time-Max (tf) :
- 124ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reverse Recovery Time :
- 122 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 15.875mm
- Qualification Status :
- Not Qualified
- Transistor Application :
- POWER CONTROL
- Power Dissipation :
- 180W
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 40A
- Turn Off Time-Nom (toff) :
- 309 ns
- Collector Emitter Voltage (VCEO) :
- 1.7V
- Rise Time-Max :
- 50ns
- Test Condition :
- 240V, 40A, 10 Ω, 15V
- ECCN Code :
- EAR99
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Td (on/off) @ 25°C :
- 18ns/144ns
- Height :
- 20.701mm
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Width :
- 5.3086mm
- Input Type :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 5V
- Number of Pins :
- 3
- IGBT Type :
- Trench
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Turn On Time :
- 55 ns
- Current - Collector Pulsed (Icm) :
- 120A
- Collector Emitter Saturation Voltage :
- 1.7V
- Element Configuration :
- Single
- Published :
- 2007
- Switching Energy :
- 409μJ (on), 838μJ (off)
- Gate Charge :
- 73nC
- Number of Elements :
- 1
- Datasheets
- IRGP4072DPBF
IRGP4072DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGP4072DPBF Description
The IRGP4072DPBF IGBT from Infineon Technologies is an insulated gate bipolar transistor with an ultrafast soft recovery diode.
IRGP4072DPBF Features
100% of the parts tested for clamped inductive load
Ultra-fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 150 °C
Square RBSOA
IRGP4072DPBF Applications
Welding
Solar converters and inverters
Uninterruptible Power Supplies
Battery operated vehicles
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