IRG7PH35UD1PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Power Dissipation-Max (Abs) :

179W

Mounting Type :

Through Hole

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Number of Terminations :

3

Published :

2010

Qualification Status :

Not Qualified

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

30V

Power - Max :

179W

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn Off Time-Nom (toff) :

400 ns

RoHS Status :

RoHS Compliant

Switching Energy :

620μJ (off)

Transistor Element Material :

SILICON

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

IRG7PH35

Package / Case :

TO-247-3

Input Type :

Standard

Current - Collector Pulsed (Icm) :

150A

Reach Compliance Code :

Compliant

Gate Charge :

85nC

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

-/160ns

Fall Time-Max (tf) :

105ns

Test Condition :

600V, 20A, 10 Ω, 15V

JEDEC-95 Code :

TO-247AC

IGBT Type :

Trench

Terminal Position :

Single

Current - Collector (Ic) (Max) :

50A