IRG7CH28UEF

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Mfr.Part #
IRG7CH28UEF
Manufacturer
Infineon Technologies
Package / Case
Die
Datasheet
Download
Description
IGBT 1200V ULTRA FAST DIE
Stock
27,054
In Stock :
27,054

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Voltage - Collector Emitter Breakdown (Max) :
1200V
Test Condition :
600V, 15A, 22 Ω, 15V
Package / Case :
Die
Operating Temperature :
-40°C~175°C TJ
Collector Emitter Voltage (VCEO) :
1.55V
Collector Emitter Breakdown Voltage :
1.2kV
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
Not Applicable
Packaging :
Bulk
Td (on/off) @ 25°C :
35ns/225ns
Vce(on) (Max) @ Vge, Ic :
1.55V @ 15V, 2.5A
Mount :
Surface Mount
RoHS Status :
RoHS Compliant
Gate Charge :
60nC
Datasheets
IRG7CH28UEF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG7CH28UEF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Die, Operating Temperature:-40°C~175°C TJ, Mounting Type:Surface Mount, IRG7CH28UEF pinout, IRG7CH28UEF datasheet PDF, IRG7CH28UEF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG7CH28UEF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG7CH28UEF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG7CH28UEF Description


A INSULATED GATE BIPOLAR TRANSISTOR is IRG7CH28UEF.



IRG7CH28UEF Features


  • high switching frequencies and efficiency across a wide range of applications

  • Higher power capability and robust hard switching performance result in improved reliability.

  • excellent parallel operation with current sharing



IRG7CH28UEF Applications


  • Electric Heating

  • The use of microwaves

  • Welding equipment

  • Applications for Soft Switching

  • Drives for motors

  • UPS

  • Inverters for HEV


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