IRG7PH35UD1-EP

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

2.2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AD

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

400 ns

Package / Case :

TO-247-3

Gate-Emitter Thr Voltage-Max :

6V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Type :

Standard

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Power - Max :

179W

Fall Time-Max (tf) :

105ns

Transistor Application :

POWER CONTROL

Packaging :

Tube

Qualification Status :

Not Qualified

Published :

2012

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Number of Elements :

1

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Switching Energy :

620μJ (off)

Current - Collector Pulsed (Icm) :

150A

Base Part Number :

IRG7PH35

Max Power Dissipation :

179W

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

250

Mount :

Through Hole

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

ECCN Code :

EAR99

Gate Charge :

130nC

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Td (on/off) @ 25°C :

-/160ns

Collector Emitter Saturation Voltage :

1.2kV

Test Condition :

600V, 20A, 10 Ω, 15V

Max Collector Current :

50A

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Terminal Finish :

MATTE TIN OVER NICKEL

Element Configuration :

Single

IGBT Type :

Trench