IRG7PH35UD-EP

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2010

Package / Case :

TO-247-3

Number of Elements :

1

Td (on/off) @ 25°C :

30ns/160ns

Gate-Emitter Thr Voltage-Max :

6V

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1.9V

Base Part Number :

IRG7PH35

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

400 ns

Turn On Time :

45 ns

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Max Power Dissipation :

180W

REACH SVHC :

No SVHC

Switching Energy :

1.06mJ (on), 620μJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Factory Lead Time :

16 Weeks

Packaging :

Tube

Number of Pins :

3

Mounting Type :

Through Hole

Input Type :

Standard

Current - Collector Pulsed (Icm) :

60A

Number of Terminations :

3

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Gate Charge :

85nC

JEDEC-95 Code :

TO-247AD

Max Collector Current :

50A

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mount :

Through Hole

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

IGBT Type :

Trench

Test Condition :

600V, 20A, 10 Ω, 15V

Element Configuration :

Single

Power - Max :

180W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

105 ns

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 20A

Collector Emitter Voltage (VCEO) :

2.2V