IRG4RC20FTRPBF
- Mfr.Part #
- IRG4RC20FTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 22A 66W DPAK
- Stock
- 3,110
- In Stock :
- 3,110
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Width :
- 6.22mm
- JEDEC-95 Code :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- POWER CONTROL
- Turn On Delay Time :
- 26 ns
- Number of Terminations :
- 2
- Max Power Dissipation :
- 66W
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 44A
- Weight :
- 350.003213mg
- Switching Energy :
- 190μJ (on), 920μJ (off)
- Height :
- 1.8034mm
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 194 ns
- Lead Free :
- Contains Lead, Lead Free
- Mount :
- Surface Mount
- Gate Charge :
- 27nC
- Factory Lead Time :
- 13 Weeks
- Base Part Number :
- IRG4RC20FPBF
- Current Rating :
- 22A
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 24ns
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Test Condition :
- 480V, 12A, 50 Ω, 15V
- Power Dissipation :
- 66W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Turn On Time :
- 51 ns
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Length :
- 6.7056mm
- Operating Temperature :
- -55°C~150°C TJ
- Input Type :
- Standard
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage - Rated DC :
- 600V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 600V
- Turn Off Time-Nom (toff) :
- 706 ns
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Collector Emitter Saturation Voltage :
- 2.1V
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2001
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 26ns/194ns
- Element Configuration :
- Single
- Max Collector Current :
- 22A
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- IRG4RC20FTRPBF

IRG4RC20FTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4RC20FTRPBF Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
IRG4RC20FTRPBF Applications
? Automotive Applications
? Power Supply for Microcontrollers and DSPs
IRG4RC20FTRPBF Features
? Qualified for Automotive Applications
? AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
– Device HBM ESD Classification Level 2
? Input Operating Range 5 V to 30 V (VBAT)
? Two, Adjustable Output Voltage, Step-Down
Switching Voltage Regulators
? External Clock Input
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