IRG4RC20FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

66W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Current - Collector (Ic) (Max) :

22A

Fall Time-Max (tf) :

340ns

Input Type :

Standard

Time@Peak Reflow Temperature-Max (s) :

30

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

26ns/194ns

Packaging :

Tube

Gate-Emitter Voltage-Max :

20V

Test Condition :

480V, 12A, 50 Ω, 15V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Turn On Time :

51 ns

Qualification Status :

Not Qualified

Current - Collector Pulsed (Icm) :

44A

Transistor Application :

POWER CONTROL

Switching Energy :

190μJ (on), 920μJ (off)

Surface Mount :

yes

Reach Compliance Code :

Compliant

Voltage - Collector Emitter Breakdown (Max) :

600V

Peak Reflow Temperature (Cel) :

260

Published :

2001

Gate Charge :

27nC

Operating Temperature :

-55°C~150°C TJ

Power - Max :

66W

RoHS Status :

RoHS Compliant

Number of Elements :

1

JEDEC-95 Code :

TO-252AA

Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Terminal Form :

Gull wing

Base Part Number :

IRG4RC20FPBF

Transistor Element Material :

SILICON

Number of Terminations :

2

ECCN Code :

EAR99

Turn Off Time-Nom (toff) :

706 ns