IRG4RC10KDPBF

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Mfr.Part #
IRG4RC10KDPBF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IGBT 600V 9A 38W DPAK
Stock
8,715
In Stock :
8,715

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Length :
6.73mm
Max Operating Temperature :
150°C
Collector Emitter Saturation Voltage :
2.62V
Collector Emitter Breakdown Voltage :
600V
Supplier Device Package :
D-Pak
Min Operating Temperature :
-55°C
Number of Pins :
3
Base Part Number :
IRG4RC10KDPBF
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
2.62V
Published :
2004
Current Rating :
9A
Input Type :
Standard
Power Dissipation :
38W
Mounting Type :
Surface Mount
RoHS Status :
RoHS Compliant
Vce(on) (Max) @ Vge, Ic :
2.62V @ 15V, 5A
Gate Charge :
19nC
Td (on/off) @ 25°C :
49ns/97ns
Current - Collector (Ic) (Max) :
9A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
250μJ (on), 140μJ (off)
Height :
2.39mm
Packaging :
Tube
Max Power Dissipation :
38W
Current - Collector Pulsed (Icm) :
18A
Element Configuration :
Single
Reverse Recovery Time :
28 ns
Power - Max :
38W
Voltage - Collector Emitter Breakdown (Max) :
600V
Max Collector Current :
9A
Operating Temperature :
-55°C~150°C TJ
Test Condition :
480V, 5A, 100Ohm, 15V
Voltage - Rated DC :
600V
Mount :
Surface Mount
Width :
6.22mm
Datasheets
IRG4RC10KDPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4RC10KDPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Base Part Number:IRG4RC10KDPBF, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IRG4RC10KDPBF pinout, IRG4RC10KDPBF datasheet PDF, IRG4RC10KDPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4RC10KDPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4RC10KDPBF


IRG4RC10KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4RC10KDPBF Description

 

IRG4RC10KDPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4RC10KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4RC10KDPBF has the common source configuration.

 

 

IRG4RC10KDPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG4RC10KDPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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