IRG4PSC71KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

600V

Termination :

Through Hole

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Width :

5.3mm

Lead Free :

Lead Free

Power Dissipation :

350W

Transistor Element Material :

SILICON

Element Configuration :

Single

Input Type :

Standard

Length :

16.0782mm

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

Rise Time :

107ns

REACH SVHC :

No SVHC

Transistor Application :

Motor Control

Factory Lead Time :

13 Weeks

Current - Collector Pulsed (Icm) :

200A

Turn Off Time-Nom (toff) :

517 ns

Reverse Recovery Time :

82 ns

Turn On Delay Time :

82 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 60A

Package / Case :

TO-274AA

Max Collector Current :

85A

Voltage - Rated DC :

600V

Collector Emitter Voltage (VCEO) :

2.3V

Switching Energy :

3.95mJ (on), 2.33mJ (off)

Max Power Dissipation :

350W

Gate Charge :

340nC

Turn On Time :

191 ns

Td (on/off) @ 25°C :

82ns/282ns

Polarity/Channel Type :

N-Channel

Additional Feature :

LOW CONDUCTION LOSS

Height :

20.8mm

Published :

1998

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mount :

Through Hole

Turn-Off Delay Time :

282 ns

Test Condition :

480V, 60A, 5 Ω, 15V

Number of Pins :

3

Collector Emitter Saturation Voltage :

1.83V

Current Rating :

85A

Number of Elements :

1