IRG4PSC71KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

350W

JESD-609 Code :

e3

Packaging :

Bulk

Width :

5.3mm

Additional Feature :

LOW CONDUCTION LOSS

Termination :

Through Hole

Gate Charge :

340nC

Max Power Dissipation :

350W

Transistor Application :

Motor Control

Turn On Time :

191 ns

Turn On Delay Time :

82 ns

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rise Time :

107ns

Current - Collector Pulsed (Icm) :

200A

Max Collector Current :

85A

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Published :

1998

Test Condition :

480V, 60A, 5 Ω, 15V

Collector Emitter Voltage (VCEO) :

2.3V

Turn-Off Delay Time :

282 ns

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 60A

Reverse Recovery Time :

82 ns

Switching Energy :

3.95mJ (on), 2.33mJ (off)

Radiation Hardening :

No

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

517 ns

Number of Terminations :

3

Factory Lead Time :

13 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

82ns/282ns

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.83V

Length :

16.0782mm

ECCN Code :

EAR99

Number of Elements :

1

Height :

20.8mm

Package / Case :

TO-274AA

Current Rating :

85A