IRG4PH50UPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Max Power Dissipation :

200W

Voltage - Rated DC :

1.2kV

Power Dissipation :

200W

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Test Condition :

960V, 24A, 5 Ω, 15V

Element Configuration :

Single

Turn On Time :

49 ns

Turn Off Time-Nom (toff) :

600 ns

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Breakdown Voltage :

1.2kV

Turn-Off Delay Time :

200 ns

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 24A

Lead Free :

Lead Free

Published :

2000

Additional Feature :

LOW CONDUCTION LOSS

Gate Charge :

160nC

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

180A

Number of Terminations :

3

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AC

Mount :

Through Hole

Td (on/off) @ 25°C :

35ns/200ns

Input Type :

Standard

ECCN Code :

EAR99

Package / Case :

TO-247-3

Current Rating :

45A

Factory Lead Time :

14 Weeks

Termination :

Through Hole

REACH SVHC :

No SVHC

Length :

15.875mm

Turn On Delay Time :

35 ns

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

3.7V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Fall Time-Max (tf) :

500ns

Number of Pins :

3

Switching Energy :

530μJ (on), 1.41mJ (off)

Width :

5.3mm

Height :

20.3mm

Rise Time :

15ns

Case Connection :

COLLECTOR

Max Collector Current :

45A

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

3.7V