IRG4PH50KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Input Type :

Standard

Switching Energy :

1.21mJ (on), 2.25mJ (off)

Power Dissipation :

200W

Max Power Dissipation :

200W

Gate-Emitter Thr Voltage-Max :

6V

Collector Emitter Voltage (VCEO) :

3.5V

Width :

5.3086mm

Rise Time :

29ns

Radiation Hardening :

No

Element Configuration :

Single

Number of Pins :

3

Gate-Emitter Voltage-Max :

20V

Transistor Application :

Motor Control

Fall Time-Max (tf) :

190ns

JEDEC-95 Code :

TO-247AC

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Gate Charge :

180nC

Collector Emitter Saturation Voltage :

3.28V

Vce(on) (Max) @ Vge, Ic :

3.5V @ 15V, 24A

Transistor Element Material :

SILICON

Current Rating :

45A

Published :

2000

Td (on/off) @ 25°C :

36ns/200ns

Height :

20.701mm

Additional Feature :

LOW CONDUCTION LOSS

Number of Terminations :

3

Mount :

Through Hole

Packaging :

Bulk

Voltage - Rated DC :

1.2kV

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

1200V

Current - Collector Pulsed (Icm) :

90A

Test Condition :

960V, 24A, 5 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

1.2kV

Termination :

Through Hole

Turn Off Time-Nom (toff) :

660 ns

Mounting Type :

Through Hole

Max Collector Current :

45A

Turn On Time :

64 ns

REACH SVHC :

No SVHC

Package / Case :

TO-247-3

Length :

15.875mm