IRG4PH50KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

3.83mJ (on), 1.9mJ (off)

Reverse Recovery Time :

90 ns

Transistor Application :

Motor Control

Collector Emitter Breakdown Voltage :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Mount :

Through Hole

Current - Collector Pulsed (Icm) :

90A

Rise Time :

100ns

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

1.2kV

Turn On Delay Time :

87 ns

Turn On Time :

139 ns

Collector Emitter Saturation Voltage :

2.77V

Test Condition :

800V, 24A, 5 Ω, 15V

Element Configuration :

Single

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

6V

Max Power Dissipation :

200W

Factory Lead Time :

14 Weeks

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

3.5V

Packaging :

Tube

Published :

2000

Max Collector Current :

45A

Termination :

Through Hole

Height :

20.3mm

Lead Free :

Lead Free

Current Rating :

45A

REACH SVHC :

No SVHC

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

87ns/140ns

Power Dissipation :

200W

Number of Pins :

3

Turn Off Time-Nom (toff) :

700 ns

Length :

15.875mm

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn-Off Delay Time :

140 ns

Width :

5.3mm

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-247-3

Vce(on) (Max) @ Vge, Ic :

3.5V @ 15V, 24A

JEDEC-95 Code :

TO-247AC

Gate Charge :

180nC