IRG4PH40UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Delay Time :

46 ns

Packaging :

Bulk

Gate-Emitter Thr Voltage-Max :

6V

Current - Collector Pulsed (Icm) :

82A

Turn-Off Delay Time :

150 ns

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

2.43V

Turn Off Time-Nom (toff) :

750 ns

Number of Elements :

1

Reverse Recovery Time :

63 ns

Height :

20.7mm

Mount :

Through Hole

Number of Terminations :

3

Termination :

Through Hole

Turn On Time :

74 ns

Length :

15.87mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Max Power Dissipation :

160W

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-247AC

Max Collector Current :

41A

Radiation Hardening :

No

Rise Time :

59ns

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Power Dissipation :

160W

Factory Lead Time :

14 Weeks

Collector Emitter Breakdown Voltage :

1.2kV

Td (on/off) @ 25°C :

46ns/97ns

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Additional Feature :

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC :

1.2kV

Polarity/Channel Type :

N-Channel

Current Rating :

41A

Switching Energy :

1.8mJ (on), 1.93mJ (off)

Width :

5.3086mm

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

3.1V

Gate Charge :

86nC

Input Type :

Standard

Package / Case :

TO-247-3

Element Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Test Condition :

800V, 21A, 10 Ω, 15V

Gate-Emitter Voltage-Max :

20V

ECCN Code :

EAR99