IRG4PH40UD-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Width :

5.3086mm

Mounting Type :

Through Hole

Power Dissipation :

160W

Height :

20.7mm

Published :

2004

Number of Elements :

1

Length :

15.87mm

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Additional Feature :

ULTRA FAST SOFT RECOVERY

Factory Lead Time :

14 Weeks

Td (on/off) @ 25°C :

46ns/97ns

Max Power Dissipation :

160W

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

82A

Test Condition :

800V, 21A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Gate Charge :

86nC

Number of Terminations :

3

Collector Emitter Saturation Voltage :

2.43V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

74 ns

Rise Time :

35ns

Switching Energy :

1.8mJ (on), 1.93mJ (off)

Lead Free :

Lead Free

Mount :

Through Hole

Packaging :

Bulk

Input Type :

Standard

Radiation Hardening :

No

Voltage - Rated DC :

1.2kV

Case Connection :

COLLECTOR

Reverse Recovery Time :

63 ns

JEDEC-95 Code :

TO-247AD

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

1.2kV

Number of Pins :

3

RoHS Status :

RoHS Compliant

Current Rating :

41A

Turn Off Time-Nom (toff) :

750 ns

Collector Emitter Voltage (VCEO) :

3.1V

Max Collector Current :

41A

Voltage - Collector Emitter Breakdown (Max) :

1200V