IRG4PH20KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

JEDEC-95 Code :

TO-247AC

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

1.2kV

Input Type :

Standard

Collector Emitter Saturation Voltage :

3.17V

Test Condition :

800V, 5A, 50 Ω, 15V

Element Configuration :

Single

Mount :

Through Hole

Height :

20.7mm

Radiation Hardening :

No

Turn On Time :

80 ns

Gate Charge :

28nC

Published :

1998

Collector Emitter Voltage (VCEO) :

4.3V

Collector Emitter Breakdown Voltage :

1.2kV

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1200V

Gate-Emitter Thr Voltage-Max :

6.5V

Current - Collector Pulsed (Icm) :

22A

Factory Lead Time :

14 Weeks

Reverse Recovery Time :

51 ns

Termination :

Through Hole

Length :

15.87mm

Switching Energy :

620μJ (on), 300μJ (off)

Polarity/Channel Type :

N-Channel

Transistor Application :

Motor Control

Number of Terminations :

3

Packaging :

Bulk

Width :

5.3086mm

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

4.3V @ 15V, 5A

Current Rating :

11A

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Max Power Dissipation :

60W

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

730 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

60W

Number of Elements :

1

Td (on/off) @ 25°C :

50ns/100ns

Number of Pins :

3

Rise Time :

30ns

Transistor Element Material :

SILICON

Max Collector Current :

11A