IRG4PC60UPBF
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- Mfr.Part #
- IRG4PC60UPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PC60 - DISCRETE IGBT WITHOUT
- Stock
- 8,985
- In Stock ：
- 8,985
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Rise Time :
- 42ns
- Height :
- 20.701mm
- Collector Emitter Breakdown Voltage :
- 600V
- Collector Emitter Voltage (VCEO) :
- 2V
- Qualification Status :
- Not Qualified
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2000
- Gate-Emitter Thr Voltage-Max :
- 6V
- Turn On Delay Time :
- 39 ns
- Transistor Application :
- POWER CONTROL
- Number of Elements :
- 1
- Current - Collector Pulsed (Icm) :
- 300A
- Max Power Dissipation :
- 520W
- Voltage - Rated DC :
- 600V
- Max Collector Current :
- 75A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 75A
- ECCN Code :
- EAR99
- Td (on/off) @ 25°C :
- 39ns/200ns
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Turn Off Time-Nom (toff) :
- 460 ns
- Turn-Off Delay Time :
- 200 ns
- Switching Energy :
- 280μJ (on), 1.1mJ (off)
- Length :
- 15.875mm
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 40A
- Mount :
- Through Hole
- Width :
- 5.3086mm
- Lead Free :
- Lead Free
- Turn On Time :
- 78 ns
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 520W
- Collector Emitter Saturation Voltage :
- 2V
- Test Condition :
- 480V, 40A, 5 Ω, 15V
- Packaging :
- Bulk
- JEDEC-95 Code :
- TO-247AC
- Mounting Type :
- Through Hole
- Gate Charge :
- 310nC
- Factory Lead Time :
- 14 Weeks
- Input Type :
- Standard
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRG4PC60UPBF
IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.
Features
-
Industry standard TO-247AC package
-
Lead-Free
-
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode
-
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
-
IGBT's optimized for specified application conditions
-
Designed for best performance when used with IR Hexfred & IR Fred companion diodes
-
Generation 4 IGBT's offer highest efficiency available
Applications
-
Power Management
-
Motor Drive & Control
-
AC and DC Motor Drives Offering Speed Control
-
Chopper and Inverters
-
Solar Inverters
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